Polyimide Film Formation via Monomer Parameter Changes

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Solution Overview

Problem

The existing methods for forming polyimide films as insulation in three-dimensional semiconductor device configurations face challenges due to the high relative permittivity of polyimide films, making it difficult to achieve satisfactory burial in concave portions with large aspect ratios and requiring elevated process temperatures.

Innovation Solution

A method involving dehydration condensation of bifunctional acid anhydrides and bifunctional amines, where non-aromatic monomers are used, allowing for the formation of polyimide films with low relative permittivity by alternately supplying processing gases and replacing the atmosphere, enabling precise control and uniformity in film thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If polyimide film is used as insulation film in concave portions, then insulation function is provided, but the high relative permittivity of polyimide makes it difficult to achieve satisfactory burial and requires elevated process temperatures

Engineering Contradiction:
Improveinsulation functionVSAvoidburial quality
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the chemical structure parameter of the monomers from aromatic to non-aromatic type. This parameter change results in polyimide films with lower relative permittivity, which improves the insulation performance and allows for satisfactory burial in concave portions without requiring elevated process temperatures.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If conventional polyimide film formation method is used, then film is formed on substrate, but the process requires high temperature elevation which complicates the manufacturing process

Engineering Contradiction:
Improvefilm formation controlVSAvoidprocess temperature
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The patent changes the monomer type parameter from aromatic to non-aromatic, which fundamentally alters the film formation characteristics. This enables the polyimide film to be formed at lower temperatures while maintaining good control and quality, eliminating the need for high temperature elevation in the conventional process.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If non-aromatic monomers are used, then polyimide films with low relative permittivity are formed, but the monomer selection and process control become more complex

Engineering Contradiction:
Improveinsulation propertiesVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent specifies using non-aromatic monomers with particular functional groups (carboxyl, carboxylic acid anhydride, amino, or amine groups). This parameter specification achieves low relative permittivity polyimide films with excellent insulation properties while maintaining manageable process complexity through clear monomer selection criteria.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the formation of polyimide films with excellent insulation properties and thermal resistance, suitable for application as an insulation film in three-dimensional device structures, while reducing the need for high temperatures and improving precision in film formation.

Implementation Method 1

forming a polyimide film on a surface of a substrate by dehydration condensation of a first monomer including a bifunctional acid anhydride and a second monomer including a bifunctional amine

Methodology Applied
Scientific EffectDehydration condensation: Condensation

Implementation Method 2

evacuating at least one of the first processing gas and the second processing gas from the processing chamber

Methodology Applied
Scientific EffectEvacuation: Vacuum

Data Source

PatentUS9162252B2Film forming method
Publication Date: 2015.10.20 TOKYO ELECTRON LTD
  • US9162252B2 patent drawing
  • US9162252B2 patent drawing
  • US9162252B2 patent drawing

AI summary

According to an embodiment of the present disclosure, a method of forming a polyimide film on a substrate is disclosed. Such method can be easily controlled and form a polyimide film applicable as an insulation film. While a wafer is heated at a temperature at which a polyimide film is formed, a cycle, in which the wafer is sequentially supplied with a first processing gas, for example, containing a PMDA-based first monomer, and a second processing gas containing a non-aromatic monomer, for example, an HMDA-based second monomer, is performed for a predetermined number of times. When the processing gases are switched, a replacement gas is supplied into a reaction tube so that the monomers are not mixed together under the atmosphere in the reaction tube.