Polyimide Electrode Opening Shape for Adhesion and Corrosion Control

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Solution Overview

Problem

Conventional semiconductor devices face reliability issues due to weakened adhesiveness between the plating film and polyimide film, leading to void formation and local corrosion, especially when high-function regions are integrated, as the existing convex shape designs do not effectively cope with complex patterns.

Innovation Solution

The semiconductor device features a polyimide film with a convex portion and a concave portion at the end, where the radius of curvature of the convex portion is larger than the concave portion, optimizing the cross-sectional shape to alleviate stress and enhance adhesiveness, thereby preventing void formation and corrosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a convex shape with a large radius of curvature (R≥200 μm) is used at the end portion of the polyimide film, then stress is alleviated and adhesiveness between the plating film and polyimide film is improved, but the design does not effectively cope with complex patterns when high-function regions are integrated

Engineering Contradiction:
Improveadhesiveness between plating film and polyimide filmVSAvoidability to cope with complex patterns
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The end portion of the polyimide film is segmented into multiple convex portions and concave portions instead of using a single convex shape. This segmentation allows the design to adapt to complex patterns while maintaining stress alleviation and adhesiveness benefits in each segment.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the polyimide film end are given different local characteristics - convex portions for stress alleviation and adhesiveness, and concave portions for pattern adaptation. This local quality differentiation enables the structure to handle complex patterns effectively while maintaining reliability.

Inventive Principle:
Principle #3Local quality

2Reliability

If the radius of curvature of the convex portion is made larger to alleviate stress and improve adhesiveness, then void formation and corrosion are suppressed, but the complexity of the film structure increases

Engineering Contradiction:
Improvesuppression of void formation and corrosionVSAvoidcomplexity of polyimide film structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The polyimide film end is divided into multiple convex and concave portions, distributing the structural complexity across segments while maintaining the beneficial large radius of curvature in convex portions for stress alleviation and corrosion suppression.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The polyimide film structure employs asymmetric design with both convex and concave portions having different radii of curvature, creating a non-uniform structure that suppresses void formation and corrosion while adapting to complex device patterns.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS20230395367A1Semiconductor device
Publication Date: 2023.12.07 FUJI ELECTRIC CO LTD
  • US20230395367A1 patent drawing
  • US20230395367A1 patent drawing
  • US20230395367A1 patent drawing

AI summary

A semiconductor device has a semiconductor base substrate, a first electrode disposed on the surface of the semiconductor base substrate, a protective film covering an end portion of the first electrode, and a second electrode disposed on the first electrode, in an opening of the protective film. The protective film has an end portion where the protective film and the second electrode overlap. In a plan view of the semiconductor device, the end portion has a convex portion with a first radius of curvature and a concave portion with a second radius of curvature. The convex portion protrudes in a direction away from the opening, and the convex portion is recessed toward the opening. The first radius of curvature is larger than the second radius of curvature.