Polyimide Redistribution Dielectric for High-Density Semiconductor Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and component density due to limitations in reducing minimum feature size, which also affects the packaging techniques of semiconductor dies, particularly in Package-on-Package (PoP) technology.
Innovation Solution
The use of a polyimide material to form dielectric layers within semiconductor devices, which involves a process of forming a polymer precursor, applying it over a substrate, exposing and developing it to form a dielectric layer, and then curing it to achieve specific properties such as low dissipation factor and high Young's modulus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to achieve higher integration density, then more components can be integrated into a given area, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent segments the manufacturing process into distinct modules: forming dielectric layers with specific polymer materials, creating conductive features through patterned deposition, and using release layers for easy separation. This modular approach enables complex high-density interconnect structures to be built through repeated, standardized process steps rather than monolithic complex operations.
Solution Approach 2:
The patent applies preliminary actions by pre-forming dielectric layers with embedded conductive features before final packaging, and using release layers that are prepared in advance to enable subsequent separation. The polymer materials are selected and prepared with specific properties (low dissipation factor, high Young's modulus) beforehand to ensure performance in the final high-density structure.
2Quantity of substance
If minimum feature size is reduced to achieve higher integration density, then more components can be integrated into a given area, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes material parameters by selecting polymer materials with specific properties (low dissipation factor, high Young's modulus, appropriate CTE) to enable precise manufacturing at reduced feature sizes. The dielectric layers are formed with controlled thickness and material composition to maintain precision in high-density interconnect structures.
Solution Approach 2:
The patent replaces traditional mechanical patterning methods with chemical and physical processes: polymer materials are deposited and cured to form dielectric layers, conductive features are formed through electroplating or electroless plating, and release layers use light-to-heat conversion for separation. These substitutions enable better control over feature dimensions and precision.
3Reliability
If polymer materials with high Young's modulus are used to reduce stress on solder joints, then mechanical reliability improves, but material selection and processing complexity increase
Solution Approach 1:
The patent uses composite material structures: polymer-based dielectric layers combined with conductive features (copper, aluminum, or other metals), and release layers with light-to-heat conversion properties. This composite approach provides both the mechanical reliability needed for solder joints (through high Young's modulus polymer materials) and the functional properties needed for manufacturing (through integrated conductive and release features).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with enhanced integration density, reduced device insertion loss, and improved mechanical properties, such as reduced stress on solder joints and increased adhesion, leading to more reliable and efficient semiconductor packages.
Implementation Method 1
exposing and developing it to form a dielectric layer
Implementation Method 2
curing it to achieve specific properties such as low dissipation factor and high Young's modulus
Data Source
AI summary
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.