Photosensitive Polyimide Resin for Low-Dk Semiconductor Patterning
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Solution Overview
Problem
Existing polyimide precursor resins used in semiconductor devices have high permittivity and dielectric loss factors, which are not suitable for advanced semiconductor technology requiring low permittivity and low dielectric loss factors, especially in high-frequency applications, and lack adequate pattern formability and reliability.
Innovation Solution
A photosensitive resin composition is developed with a specific polymer structure represented by Chemical Formula 1, incorporating a polymerization reaction of a diamine compound and a dianhydride compound, along with photopolymerizable compounds and photopolymerization initiators, to achieve low permittivity and dielectric loss factors, while ensuring excellent pattern formability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional polyimide precursor resin is used, then manufacturing process is simple and ease of operation is maintained, but permittivity and dielectric loss factor are high which is unsuitable for high-frequency applications
Solution Approach 1:
The patent modifies the chemical structure parameters of the polyimide precursor resin by incorporating specific diamine compounds and dianhydride compounds with controlled molecular weights and functional groups. This structural parameter change reduces the dielectric loss factor and permittivity to meet high-frequency requirements while maintaining processability through optimized composition ratios and molecular weight distributions.
Solution Approach 2:
The invention creates a composite photosensitive resin composition by combining modified polyimide precursor resin with photopolymerizable compounds and photopolymerization initiators. This composite structure achieves both low dielectric loss factor (0.001-0.015 at 10 GHz) and excellent pattern formability, resolving the contradiction between performance optimization and manufacturing simplicity.
2Reliability
If polyimide resin is used for 4G LTE communication, then reliability is adequate, but it cannot satisfy low permittivity and low dielectric loss factor requirements for 5G frequency bands
Solution Approach 1:
The patent systematically adjusts the chemical composition parameters of the polyimide precursor resin, specifically selecting diamine compounds with particular functional groups and dianhydride compounds with controlled molecular weights. These parameter changes reduce dielectric loss factor to 0.001-0.015 at 10 GHz while maintaining the thermal stability and mechanical properties necessary for reliability in 5G applications.
Solution Approach 2:
The invention introduces local structural modifications to the polyimide precursor resin by incorporating specific functional groups and molecular structures in targeted regions of the polymer chain. This local quality optimization reduces dielectric loss in critical areas while preserving overall material reliability and performance consistency across different application conditions.
3Reliability
If existing photosensitive resin composition is used, then pattern formability is acceptable, but reliability and low dielectric loss factor cannot be achieved simultaneously
Solution Approach 1:
The patent develops a composite photosensitive resin composition integrating modified polyimide precursor resin with photopolymerizable compounds and photopolymerization initiators. This composite formulation achieves synergistic effects where the polyimide precursor provides low dielectric loss factor and reliability, while the photopolymerizable components enable excellent pattern formability through controlled photopolymerization, simultaneously satisfying both requirements.
Solution Approach 2:
The photopolymerizable compounds and photopolymerization initiators act as intermediaries that bridge the gap between the polyimide precursor resin's excellent reliability and low dielectric loss properties, and the required pattern formability. These intermediary components enable precise pattern formation through light-induced polymerization while preserving the underlying resin's low dielectric loss characteristics for high-frequency performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resin composition achieves low permittivity (Dk) and dielectric loss factor (Df) of about 0.001 to 0.015 at 10 GHz, with improved reliability and pattern formability, suitable for semiconductor devices.
Implementation Method 1
a photosensitive resin composition including a resin, wherein the resin includes a polymer represented by Chemical Formula 1
Data Source
AI summary
Provided are a photosensitive resin composition, a photosensitive resin layer manufactured using the same, and a semiconductor device including the photosensitive resin layer, the photosensitive resin composition including a resin, wherein the resin includes a polymer represented by Chemical Formula 1. In Chemical Formula 1, each substituent is as defined in the specification.