Polyimide Resin Composition for High-Resolution Semiconductor Patterning

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Solution Overview

Problem

Existing resin compositions used in semiconductor devices face challenges in achieving high resolution for pattern formation, particularly in re-distribution wiring, due to issues with pattern swelling and defects during development.

Innovation Solution

A resin composition comprising polyimide or its precursor, a polymerizable compound, and a polymerization initiator, with specific molecular weight, ring structure, and ethylenically unsaturated bonds, exhibits a controlled dissolution rate and high resolution, minimizing pattern defects and swelling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional resin compositions are used for pattern formation, then manufacturing adaptability is maintained, but resolution deteriorates due to pattern swelling and defects during development

Engineering Contradiction:
ImproveresolutionVSAvoidpattern defects
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies parameter changes by precisely controlling the dissolution rate of the resin composition within a specific range (0.01 to 0.55 μm/sec). This parameter optimization prevents excessive pattern swelling during development while maintaining manufacturing adaptability, thereby resolving the contradiction between resolution improvement and defect prevention.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite materials by combining polyimide or its precursor with specific polymerizable compounds and polymerization initiators in a controlled composition ratio. This composite formulation achieves both high resolution through controlled dissolution and reduced pattern defects through the synergistic properties of the combined materials.

Inventive Principle:
Principle #40Composite materials

2Productivity

If dissolution rate is increased to improve pattern formation speed, then productivity increases, but manufacturing precision deteriorates due to pattern swelling

Engineering Contradiction:
Improvepattern formation speedVSAvoidpattern resolution
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent resolves this contradiction by identifying and optimizing the dissolution rate parameter within a specific range (0.01 to 0.55 μm/sec). This optimized parameter range balances pattern formation speed with resolution, preventing the excessive swelling that occurs at higher dissolution rates while maintaining acceptable productivity.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies dynamics by making the dissolution rate controllable and adjustable within a specific range rather than fixed at maximum. This dynamic control allows the process to adapt between speed and precision requirements, resolving the trade-off between productivity and manufacturing precision.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resin composition achieves high resolution and reduced pattern defects, ensuring excellent adhesion and preventing pattern collapse, suitable for forming interlayer insulating films in semiconductor devices.

Implementation Method 1

a polymerizable compound; and a polymerization initiator

Methodology Applied
Scientific EffectPolymerization: Photopolymerisation

Implementation Method 2

a dissolution rate of a film having a film thickness of 10 μm, which is obtained from the resin composition, in cyclopentanone is 0.01 to 0.55 μm/sec

Methodology Applied
Scientific EffectDissolution: Solvation

Data Source

PatentUS20250376552A1Resin composition, cured substance, laminate, manufacturing method for cured substance, manufacturing method for laminate, manufacturing method for semiconductor device, and semiconductor device
Publication Date: 2025.12.11 FUJIFILM CORP
  • US20250376552A1 patent drawing
  • US20250376552A1 patent drawing
  • US20250376552A1 patent drawing

AI summary

Provided are a resin composition including at least one resin selected from the group consisting of polyimide and a precursor of the polyimide, a polymerizable compound, and a polymerization initiator, in which a dissolution rate of a film having a film thickness of 10 μm, which is obtained from the resin composition, in cyclopentanone is 0.01 to 0.55 μm/sec, a cured substance obtained by curing the composition, a laminate including the cured substance, a manufacturing method for a cured substance, a manufacturing method for a laminate, a manufacturing method for a semiconductor device including the method for a cured substance, and a semiconductor device including a cured substance.