Semiconducting Polymer Patterning via Adhesive Delamination
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Solution Overview
Problem
Existing methods for patterning semiconducting polymers often result in polymer degradation and undesirable conductive pathways due to chemical processes, which can lead to low ON/OFF current ratios and crosstalk in integrated circuits, especially when dealing with sensitive polymers prone to oxidation or sensitive to microstructure and substrate conditions.
Innovation Solution
A method involving selective physical delamination using an adhesive, such as 3M Scotch tape, to remove regions of the semiconducting polymer film from a substrate with pre-defined surface patterns, avoiding chemical etching and oxygen exposure, and utilizing sacrificial layers and surface energy modification to ensure precise patterning without degrading the polymer material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical etching or photolithography is used to pattern semiconducting polymers, then patterning resolution is improved, but polymer degradation occurs due to photoirradiation or chemical exposure
Solution Approach 1:
The patent replaces chemical etching and photolithography processes with a mechanical stamping method. A physical stamp with the desired pattern is pressed onto the semiconducting polymer film, and excess polymer is mechanically removed. This mechanical approach avoids photoirradiation and chemical exposure that cause polymer degradation, thereby maintaining both patterning resolution and polymer integrity.
Solution Approach 2:
The patent introduces a stamp as an intermediary tool between the polymer film and the final pattern. The stamp acts as a mediator that transfers the pattern mechanically without requiring direct chemical or optical interaction with the polymer, thus protecting the polymer from degrading conditions while achieving precise patterning.
2Ease of manufacture
If un-patterned semiconducting polymer films are used, then device fabrication is simplified, but leakage currents increase through the bulk film
Solution Approach 1:
The patent applies segmentation by dividing the continuous polymer film into discrete patterned regions using the stamping method. This creates isolated conductive pathways where polymer material exists only in the stamped pattern areas, preventing bulk leakage currents while maintaining the simplicity of polymer deposition processes.
3Manufacturing precision
If transfer printing with patterned molds is used, then high resolution patterning is achieved, but surface properties of the mold and substrates adversely affect device performance
Solution Approach 1:
The patent extracts the pattern directly onto the substrate using a stamp, eliminating the need for transfer printing through intermediate molds. This removes the problematic interface between mold and substrate that causes performance degradation, while maintaining high patterning resolution through direct mechanical stamping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-resolution patterning of semiconducting polymers with minimal impact on device performance, maintaining high charge carrier mobilities and reducing off-currents, while providing well-defined patterns and uniform thickness, suitable for various electronic and photonic devices.
Implementation Method 1
utilizing sacrificial layers and surface energy modification to ensure precise patterning
Implementation Method 2
using an adhesive to selectively remove regions of said electronic or photonic material from said film
Data Source
AI summary
The present invention provides a method of patterning an electronic or photonic material on a substrate comprising: forming a film of said electronic or photonic material on said substrate; and using an adhesive to selectively remove regions of said electronic or photonic material from said film, thereby leaving on said substrate said patterned electronic or photonic material.