Polymer Barrier Layer with Metal Complexing Agents
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Solution Overview
Problem
Semiconductor devices face challenges with ion migration, particularly sodium ions, which can reach the gate oxide and cause threshold voltage shifts, leading to device failure, and corrosion due to migrating ions like fluoride or chloride, necessitating improved barrier or ion getter properties.
Innovation Solution
A semiconductor device with a barrier layer comprising a polymer material and an organic metal complexing agent, such as crown ether or cryptand, covalently bound or embedded within the polymer, is developed to immobilize ions and prevent their migration to the gate oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional barrier layers are used, then device structure is simple, but ion migration occurs causing threshold voltage shift and device failure
Solution Approach 1:
The patent employs composite materials by combining polymer matrices with metal complexing agents (such as crown ethers or cryptands) to create a barrier layer that possesses both structural integrity and ion-gettering capability. This composite structure allows the material to simultaneously provide physical barrier properties and chemical binding sites for migrating ions, thereby preventing ion migration without requiring multiple separate layers.
Solution Approach 2:
The metal complexing agents embedded in the polymer barrier layer act as intermediaries that selectively bind to migrating ions (particularly sodium ions). These complexing agents serve as mediator substances that capture and immobilize the harmful ions before they can reach the gate oxide, effectively preventing ion migration through chemical complexation while the polymer provides the structural framework.
2Ease of manufacture
If polymer materials are used for barrier layer, then ease of manufacture is improved, but ion binding capability is insufficient
Solution Approach 1:
The patent creates a composite material system where polymer matrices (which are easy to manufacture and apply) are combined with metal complexing agents that provide strong ion binding capability. This composite approach allows the barrier layer to maintain the ease of manufacture associated with polymer materials while simultaneously gaining the ion binding properties necessary for preventing ion migration and ensuring device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces or prevents ion migration, ensuring the functionality and reliability of semiconductor devices by stabilizing the threshold voltage and preventing corrosion.
Implementation Method 1
The barrier layer comprises a polymer material and an organic metal complexing agent covalently bound to the polymer material
Implementation Method 2
The barrier layer comprises a polymer material and at least one cryptand embedded in the polymer material
Data Source
AI summary
A semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. In an embodiment, the organic metal complexing agent includes a crown ether and/or cryptand. In an embodiment, the polymer material includes a homopolymer or copolymer resulting from the polymerization of monomers selected from the group consisting of: imides, epoxies, silicones, monomers having functional side chains, methacrylates, and any combinations thereof.