Selective Deposition Using Polymer Brush Deactivation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the difficulty in selectively forming materials at small dimensions and high aspect ratios on semiconductor substrates due to inefficiencies in conventional selective deposition processes, leading to undesired material formation on unintended locations.
Innovation Solution
The use of polymer brush structures formed through organic material deposition and thermal treatment, or initiator vapor polymerization, allows for selective material layer formation on specific regions of a substrate by confining the deposition process using polymer brush structures with distinct properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective deposition process is used, then material can be deposited on substrate, but material forms globally on entire surface without selectivity at small dimensions
Solution Approach 1:
The patent introduces polymer brush structures as intermediary layers between the substrate and the material to be deposited. These polymer brushes are selectively formed on specific regions of the substrate and act as masking agents that prevent material deposition on those regions, thereby enabling selective material formation on uncovered regions. This intermediary layer solves the selectivity problem in conventional deposition processes.
Solution Approach 2:
The patent performs preliminary actions by first forming polymer brush structures on the substrate before the actual material deposition step. The polymer brushes are created through initiator deposition followed by vapor polymerization, preparing the substrate surface with distinct regions that will control subsequent material deposition. This preliminary structuring enables precise selectivity in the final material formation.
2Manufacturing precision
If deposition process is confined to small dimensions, then selectivity improves, but conventional processes cannot efficiently confine and form materials at designated small dimensions
Solution Approach 1:
The patent applies local quality by creating polymer brush structures with specific properties only in certain regions of the substrate. The initiators are selectively disposed on first regions, and polymerization occurs only in those regions, creating local differences in surface properties. This local structuring enables precise confinement of material deposition to specific small dimensions while maintaining overall process efficiency.
Solution Approach 2:
The patent utilizes parameter changes in the polymer brush structures to control deposition selectivity. By controlling the polymerization process parameters (such as vapor polymerization conditions), the polymer brushes achieve distinct physical and chemical properties that differentiate them from other substrate regions. These parameter changes in the intermediary layer enable efficient confinement of material deposition at small dimensions.
3Manufacturing precision
If polymer brush structures are used for confinement, then selective deposition is achieved, but additional process steps are required
Solution Approach 1:
The patent merges multiple functions into the polymer brush structures. The same polymer brush layer that provides confinement also serves as a template for selective deposition and can be integrated with subsequent processing steps. The initiator deposition and polymerization processes are combined in a sequence that creates the intermediary structure while preparing it for the next deposition step, reducing the need for separate masking and unmasking operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise and selective deposition of materials on semiconductor substrates, improving the formation of structures with small critical dimensions and high aspect ratios, enhancing the accuracy and quality of semiconductor devices.
Implementation Method 1
vapor polymerizing the initiator to form polymer brush structures on the first region of the substrate
Implementation Method 2
performing a thermal treatment process to form polymer brush materials from the organic materials selective on a first region of the substrate
Data Source
AI summary
Methods for depositing desired materials formed on different locations of a substrate with different materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes disposing organic materials on a surface of a substrate, performing a thermal treatment process to form polymer brush materials from the organic materials selective on a first region of the substrate, and selectively forming a material layer on a second region of the substrate uncovered by the polymer brush materials.