Pattern-Forming Polymer Composite Mask for High-Aspect Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming high aspect ratio patterns with sufficient etch resistance, as existing mask patterns lack adequate durability during prolonged exposure to etch gases.
Innovation Solution
A polymerizable compound is developed, which forms a polymer used in a pattern forming material that, when combined with a metallic compound, creates a metal-containing organic film with high etch resistance. This film is formed by patterning an organic film and infiltrating it with a metallic compound, resulting in a composite film suitable for use as a mask pattern in semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional mask pattern is used for high aspect ratio patterning, then the pattern can be formed, but the etch resistance is insufficient during prolonged exposure to etch gases
Solution Approach 1:
The patent applies composite materials by combining an organic film with a metallic compound to form a metal-containing organic film. The organic film provides structural integrity and pattern definition, while the metallic compound infiltrated into the organic film enhances etch resistance through chemical bonding. This composite structure allows the mask pattern to withstand prolonged exposure to etch gases without degradation, resolving the contradiction between maintaining pattern integrity and achieving sufficient etch resistance during long-duration etching processes.
2Length of moving object
If the mask pattern is exposed to etch gas for a long time to achieve high aspect ratio patterns, then the etching depth increases, but the mask pattern durability decreases
Solution Approach 1:
The patent applies preliminary action by pre-infiltrating the metallic compound into the organic film before the etching process begins. This preliminary metallization step ensures that the enhanced etch resistance is already in place before the mask pattern is exposed to etch gases for extended periods. The metallic compound is introduced and bonded to the organic film structure in advance, creating a durable composite mask that can withstand long-duration etching without degradation, thus enabling deep etching while maintaining mask durability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a mask pattern with enhanced etch resistance, enabling the formation of high aspect ratio patterns in semiconductor devices, improving the durability and processing capabilities during etching processes.
Implementation Method 1
a polymerizable compound capable of producing a polymer which is useful as a pattern forming material and the polymer which is obtained by using the compound
Data Source
AI summary
A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3),where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.