Polymer Developer for Semiconductor Lithography Pattern Collapse
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Solution Overview
Problem
Fine resist patterns in semiconductor lithography are prone to collapse due to the Laplace force during the spin-drying process with conventional developers, leading to pattern distortion and failure in forming precise patterns.
Innovation Solution
A developer comprising a polymer for forming a dry-etching mask and an organic solvent, such as butyl acetate or 2-pentanone, is used to fill the spaces in the resist pattern, allowing for selective dry etching and preventing pattern collapse by forming a new resist pattern without the initial resist film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developers are used in spin-drying process, then development function is achieved, but pattern collapse occurs due to Laplace force
Solution Approach 1:
A polymer layer is introduced as an intermediary substance between the resist pattern and the conventional developer. This polymer layer has low surface tension and acts as a mediator that prevents the Laplace force from directly acting on the fine resist patterns during spin-drying, thereby preventing pattern collapse while allowing the development process to proceed
Solution Approach 2:
The surface tension parameter of the developer system is changed by adding a polymer with low surface tension. This modifies the physical properties of the developer solution, reducing the Laplace force generated during spin-drying and enabling the formation of fine patterns without collapse
2Manufacturing precision
If polymer is added to developer, then pattern collapse is suppressed, but developer composition complexity increases
Solution Approach 1:
Instead of fundamentally changing the developer system, the invention modifies an existing parameter (surface tension) by adding a polymer additive. This approach maintains the basic developer composition while adjusting a specific physical property to achieve the desired effect of preventing pattern collapse
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of this developer suppresses resist pattern collapse during development and rinse, enabling the formation of fine, precise patterns without distortion, and allows for selective dry etching to create a reverse pattern, suitable for highly integrated semiconductor devices.
Implementation Method 1
an organic solvent; butyl acetate or a mixed solvent of butyl acetate and an alcohol; 2-pentanone or a mixed solvent of 2-pentanone and an alcohol
Implementation Method 2
a polymer for forming a dry-etching mask; forming a layer of the polymer between patterns of the resist film thus patterned
Implementation Method 3
spin-drying process with conventional developers; volatilizing the solvent in the coating film material
Implementation Method 4
the Laplace force is supposed to cause pattern collapse also when the developer or the rinse solution is spun off to the outside by a centrifugal force
Data Source
AI summary
Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.