Polymer Film Depolymerization for Semiconductor Planarization
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices face challenges in achieving uniform film thickness due to unevenness of the top surface of interlayer insulating films with air gaps, which complicates subsequent processes and increases manufacturing time due to the need for time-consuming polishing techniques like CMP.
Innovation Solution
A method involving a first film deposition process where a polymer film with urea bonds is stacked on a substrate, followed by a sealing film deposition, and a desorbing process where the polymer film under the sealing film is depolymerized and diffused, allowing for the flattening of the sealing film and reducing the need for polishing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If air gaps are formed in interlayer insulating films during embedding, then dielectric constant is decreased, but surface uniformity deteriorates requiring additional polishing processes
Solution Approach 1:
A polymer film is introduced as an intermediary material to fill the air gaps in the interlayer insulating film. This polymer film has a dielectric constant lower than conventional insulating materials, maintaining the low dielectric constant benefit while providing a fillable volume that enables subsequent planarization without requiring CMP polishing of the underlying air gap structure
Solution Approach 2:
The invention changes the physical state and properties of the polymer material through temperature-controlled processes. The polymer is deposited in a solid film form, then heated to a transition temperature where it becomes viscous and flows to fill the air gaps, finally cooled to solidify in the filled state. This parameter change enables the material to adapt its shape while maintaining its low dielectric constant property
2Manufacturing precision
If CMP polishing is used to flatten the top surface of interlayer insulating films, then surface uniformity is improved, but manufacturing time increases
Solution Approach 1:
The polymer film serves as a sacrificial intermediary that is easier to planarize than the underlying air gap structure. After the polymer fills the air gaps and is planarized by a single polishing step, the polymer is selectively removed through the openings, leaving the air gap structure intact but with a planar upper surface that eliminates the need for extensive CMP processing
Solution Approach 2:
The invention replaces the mechanical CMP polishing process with a combination of polymer flow and selective removal. Instead of mechanically removing large amounts of material to achieve planarity, the polymer naturally flows to fill irregularities when heated, requiring only minimal polishing followed by chemical or thermal removal of the polymer, thereby substituting heavy mechanical processing with a more efficient process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of manufacturing processes required, enabling faster production of semiconductor devices by eliminating the need for post-processing polishing and ensuring uniform film stacking.
Implementation Method 1
the polymer film under the sealing film is desorbed and diffused through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature
Implementation Method 2
heating the substrate to a first temperature
Implementation Method 3
the polymer film under the sealing film is desorbed and diffused through the sealing film
Data Source
AI summary
A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.