Low Tg Polymer for Semiconductor Gap-Fill and Etching

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Solution Overview

Problem

There is a need for materials with improved gap-fill properties to prevent voids and seams in semiconductor devices, while also requiring enhanced resistance to wet etching and increased etching speed for dry etching.

Innovation Solution

A polymer with a specific repeating unit, represented by Formula 1, is developed, which has a glass transition temperature of 50° C. or less. This polymer is incorporated into a composition that includes an acid generator and an organic solvent, enabling improved etching properties and gap-fill capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional polymers are used, then the material provides basic protective barrier function, but the gap-fill properties are insufficient leading to voids and seams

Engineering Contradiction:

Improvegap-fill propertiesVSAvoidpresence of voids and seams

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the chemical parameters of the polymer by introducing specific repeating units with Formula 1 containing adjustable parameters (a11-a13, b12, p1) and functional groups (L11-L13, A11, R11, R12). These parameter changes enable the polymer to achieve improved gap-fill properties by controlling its interaction with the substrate and etching chemicals, eliminating voids and seams while maintaining protective barrier function.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If the polymer is designed for high wet etching resistance, then protective barrier function is improved, but dry etching speed decreases

Engineering Contradiction:

Improveresistance to wet etchingVSAvoidetching speed for dry etching

Core Design Contradiction:

ReliabilityVSSpeed

Solution Approach 1:

The patent applies local quality by designing the polymer with specific repeating units that provide different etching resistance characteristics for wet and dry etching processes. The Formula 1 structure with specific functional groups (L11-L13, A11, R11, R12) creates localized chemical properties that selectively resist wet etchants while allowing controlled removal by dry etching plasma, thus resolving the contradiction between wet etching resistance and dry etching speed.

Inventive Principle:

Principle #3Local quality

3Ease of manufacture

If the polymer structure is simplified, then ease of manufacture is improved, but the ability to provide improved etching properties and gap-fill capabilities is reduced

Engineering Contradiction:

Improvepolymer synthesis simplicityVSAvoidetching properties and gap-fill capabilities

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent maintains ease of manufacture by using a modular polymer structure (Formula 1) where parameters (a11-a13, b12, p1) and substituents (L11-L13, A11, R11, R12) can be adjusted without fundamentally changing the synthesis approach. This allows optimization of etching properties and gap-fill capabilities through parameter selection while retaining relatively simple polymerization processes, thus resolving the contradiction between manufacturing simplicity and performance optimization.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20250043046A1Polymer, composition including the same, and method of forming pattern using the composition

Publication Date: 2025.02.06 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50° C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition:wherein, in Formula 1,descriptions of L11 to L13, a11 to a13, An, R11, R12, b12, and p1 are provided in the present specification.