Low Temperature Cured Polymer Gate Insulation Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current organic thin film transistors face challenges in achieving high electrical characteristics due to the high film-forming temperature of inorganic insulation layers, which can damage plastic substrates and affect transistor performance, and existing organic gate insulation layers lack the necessary chemical and heat resistance and surface characteristics.
Innovation Solution
A low temperature-cured polymer gate insulation layer composed of an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound, which are reactive monomers that form a robust and chemically resistant layer when cured at 150°C or less, improving the electrical and chemical properties of the organic thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an inorganic insulation layer is used to form the gate insulation layer, then chemical resistance and heat resistance are improved, but film-forming temperature becomes too high causing substrate damage and affecting transistor performance
Solution Approach 1:
The patent uses a composite polymer material comprising polyimide and cyclomethicone. The polyimide provides the necessary chemical resistance and heat resistance, while the cyclomethicone additive enables low-temperature curing (at or below 150°C) by modifying the crosslinking reaction. This composite approach allows achieving both high reliability and low processing temperature that would be impossible with conventional inorganic materials alone.
2Temperature
If existing organic gate insulation layers are used, then film-forming temperature is reduced, but chemical resistance and heat resistance deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the polymer by incorporating cyclomethicone as an additive in specific amounts (0.1-10 parts by weight per 100 parts polyimide). This parameter modification transforms the curing behavior of polyimide, enabling it to cure at low temperatures while maintaining its inherent chemical and heat resistance properties. The cyclomethicone acts as a crosslinking agent that facilitates low-temperature curing without compromising the thermal stability of the polyimide backbone.
3Temperature
If conventional polymer materials are used for gate insulation layer, then low temperature processing is achieved, but surface characteristics and electrical performance deteriorate
Solution Approach 1:
The patent achieves local quality optimization by creating a dual-nature polymer system where polyimide provides thermal stability and chemical resistance in the bulk, while the cyclomethicone additive creates a modified crosslinked network structure that enables low-temperature curing and improves surface characteristics. This localized functional differentiation within the single polymer material allows simultaneous achievement of low processing temperature and excellent surface/electrical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides an organic thin film transistor with enhanced chemical resistance, heat resistance, and surface characteristics, minimizing substrate damage and improving electrical performance while allowing for a simplified low-temperature processing method.
Implementation Method 1
A low temperature-cured polymer gate insulation layer composed of an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound, which are reactive monomers that form a robust and chemically resistant layer when cured at 150°C or less
Data Source
AI summary
Provided are a low temperature-cured polymer gate insulation layer and an organic thin film transistor having the same. The gate insulation layer includes an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound each by 0.1 weight % or more.