Polymer Composition for Hardmask Etch Resistance and Planarization
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Solution Overview
Problem
Current patterning materials and techniques for electronic devices face challenges in achieving high integration and complexity due to limitations in etch resistance and planarization characteristics, particularly in the miniaturization of devices, where existing polymers do not adequately provide the necessary rigid characteristics and solubility for efficient pattern formation.
Innovation Solution
A polymer with a specific structural unit represented by Chemical Formula 1, including a carbon cyclic group with hetero atoms, is used in an organic layer composition, which offers improved etch resistance, solubility, and planarization characteristics, allowing for the formation of a hardmask layer through spin-on coating, enabling effective pattern formation and transfer in electronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If existing polymers are used for patterning, then the material is easier to process, but etch resistance and rigid characteristics are insufficient
Solution Approach 1:
The patent employs composite materials by combining the polymer backbone with specific side chain groups (Ar1-Ar4 aromatic groups, R11-R14 functional groups) to achieve both etch resistance and solubility. The composite structure integrates rigid aromatic cores for etch resistance with solubilizing groups for processability, resolving the contradiction between these two properties.
Solution Approach 2:
The patent applies local quality by introducing different functional groups at specific positions in the polymer structure. The aromatic groups (Ar1-Ar4) provide local regions of high etch resistance, while the R11-R14 groups provide local solubility enhancement. This spatial differentiation allows the material to exhibit both contradictory properties simultaneously.
2Strength
If the polymer structure is made more rigid for better etch resistance, then etch resistance improves, but solubility and planarization characteristics deteriorate
Solution Approach 1:
The patent utilizes parameter changes by systematically varying the molecular weight (500-20,000), the number of aromatic groups (Ar1-Ar4), and the functional groups (R11-R14) to optimize the balance between rigidity for etch resistance and flexibility for planarization. By adjusting these parameters, the polymer achieves both high etch resistance and excellent planarization characteristics.
3Productivity
If the device size is reduced for high integration, then integration density increases, but patterning precision and material performance requirements increase
Solution Approach 1:
The patent applies preliminary action by pre-forming a hardmask layer with controlled thickness and uniform properties before the final patterning step. This pre-formed layer provides a robust foundation that maintains patterning precision even as device dimensions are reduced for higher integration, allowing subsequent lithography steps to achieve the required precision.
4Ease of manufacture
If spin-on coating is used for applying the organic layer, then ease of application improves, but film uniformity and absence of pin-holes may deteriorate
Solution Approach 1:
The patent utilizes parameter changes by optimizing the polymer molecular weight (500-20,000) and the composition ratios to achieve optimal solution viscosity and coating properties. These parameter adjustments ensure that spin-on coating produces uniform films without pin-holes or voids, maintaining high film quality while preserving the ease of application inherent to spin-coating processes.
Data Source
AI summary
A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same.wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Ar1 to Ar4, R11 to R14, L and m are as defined in the specification and * is a linking point. When the carbon cyclic group includes at least two hetero atoms when the carbon cyclic group includes a pentagon cyclic moiety and the pentagon cyclic moiety includes a nitrogen atom (N) as a hetero atom, and the at least two hetero atoms are the same or different: