Water-Soluble Polymer Interfacial Layer for Semiconductor Patterning
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Solution Overview
Problem
Current patterning methods for semiconductor devices face limitations in forming fine patterns beyond the exposure limit of light sources, with photoresist compositions experiencing reduced etching resistance as the number of heteroatoms in water-soluble polymers increases.
Innovation Solution
A composition comprising a water-soluble polymer with an aromatic group as a side chain, a cross-linking agent, and a water-miscible solvent is used to form an interfacial layer on a photoresist pattern, enhancing etching resistance and allowing for patterns with improved line edge roughness and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of heteroatoms in the water-soluble polymer is increased to improve solubility, then the solubility in aqueous solvent is improved, but the etching resistance of the composition is reduced
Solution Approach 1:
The patent changes the chemical structure parameters of the water-soluble polymer by introducing aromatic groups as side chains. This structural modification allows the polymer to maintain solubility in aqueous solvents while simultaneously improving etching resistance, thereby resolving the contradiction between solubility and etching resistance
Solution Approach 2:
The patent uses composite materials by combining water-soluble polymers with aromatic side chains, cross-linking agents, and water-miscible solvents in a specific composition. This composite approach creates a coating that achieves both solubility and enhanced etching resistance, overcoming the limitation of single-component materials
2Ease of manufacture
If photoresist alone is used to form patterns, then the process is simple, but the pattern resolution is limited by the exposure limit of the light source
Solution Approach 1:
The patent segments the patterning process into two functional parts: photoresist for initial pattern formation and a water-soluble polymer coating layer for enhanced resolution. This segmentation allows each component to perform its specific function optimally, achieving high-resolution patterns beyond the light source exposure limit while maintaining process feasibility
Solution Approach 2:
The water-soluble polymer coating acts as an intermediary layer between the photoresist pattern and the final etched structure. This intermediary coating enhances the line edge roughness and enables patterns with dimensions smaller than the exposure limit, thereby improving manufacturing precision without fundamentally changing the photoresist process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves enhanced etching resistance and improved pattern resolution, enabling the formation of fine patterns exceeding the exposure limit of light sources with reduced line edge roughness and improved uniformity.
Implementation Method 1
a cross-linking agent and a water-miscible solvent is used to form an interfacial layer on a photoresist pattern
Data Source
AI summary
In a composition for forming an interfacial layer on a photoresist pattern, and a method of forming a pattern using the composition, the composition includes a water-soluble polymer, a cross-linking agent and a water-miscible solvent. The water-soluble polymer includes a repeating unit represented by Formula 1,wherein R1, R2, R3, R4 and R5 independently denote a hydrogen atom, a hydroxyl group, an alkyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt, R6 denotes a hydrogen atom or an alkyl group, m denotes an integer of 1 to 4 both inclusive, and x denotes an integer of 1 to 1,000 both inclusive. Also, at least one of R1, R2, R3, R4 and R5 is a hydroxyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt.