Polymer Pattern Forming Material for High Aspect Ratio Etching
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Solution Overview
Problem
In semiconductor manufacturing, achieving high aspect ratio patterns requires a mask material with high etching resistance, as existing carbon films deposited by CVD methods are time-consuming and inefficient.
Innovation Solution
A pattern forming material composed of polymers with high densities of carbonyl groups, which selectively adsorb metallic compounds, enhancing etching resistance through metallization, allowing for faster processing and improved etching performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If carbon films are deposited by CVD methods to achieve high etching resistance, then etching resistance is improved, but processing time increases significantly
Solution Approach 1:
The patent changes the chemical composition parameters of the mask material from conventional carbon-based CVD films to polymer materials containing carbonyl groups (such as polyacrylic acid, polyacrylamide, or their copolymers). This parameter change enables the mask to achieve high etching resistance through metallization with aluminum or other metals that deposit on the carbonyl groups, thereby reducing processing time while maintaining or improving etching resistance.
Solution Approach 2:
The patent creates a composite mask structure by combining polymer materials with carbonyl groups and metallic compounds (such as aluminum, titanium, or tungsten). The polymer provides the structural framework and carbonyl groups serve as anchoring sites for metal deposition, forming a composite material that achieves both high etching resistance and fast processing speeds.
2Length of stationary object
If mask exposure time to etching gas is extended to process high aspect ratio patterns, then pattern depth is improved, but mask durability deteriorates
Solution Approach 1:
The patent changes the material composition of the mask from conventional carbon films to polymer materials with carbonyl groups that can be metallized. This parameter change enables the mask to maintain its structural integrity and resist etching gas attack over extended exposure periods, allowing sufficient time to process high aspect ratio patterns while preserving mask durability.
Solution Approach 2:
The patent uses a polymer-based mask material that can be rapidly deposited and metallized, creating a mask that is both fast to apply and durable enough for extended use. The material system allows for quick turnover while maintaining performance over the required exposure duration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer-based pattern forming material with high carbonyl group density effectively increases etching resistance and film thickness, enabling efficient processing of high aspect ratio patterns with improved metallization rates compared to traditional carbon deposition methods.
Implementation Method 1
polymers with high densities of carbonyl groups, which selectively adsorb metallic compounds, enhancing etching resistance through metallization
Data Source
AI summary
A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.