Novel Polymer Composition for Semiconductor Etching
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in the difficulty of etching layers using thinner photoresist patterns, which leads to increased capillary forces causing pattern collapse and insufficient etch selectivity, making it hard to form uniform circuit patterns, especially when using photoresist materials with aliphatic compounds, and the complexity and cost of the hard mask process.
Innovation Solution
A novel polymer represented by specific chemical formulas, capable of being applied through a solution process like spin-coating, offering excellent etch selectivity and mechanical properties, is developed. This polymer can be used in gap-fill, double patterning, and as a hard mask, and is combined with a crosslinking agent and acid catalyst in a composition that simplifies the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the thickness of the photoresist film is decreased to prevent pattern collapse, then the photoresist patterns can maintain their shape during washing, but the etch selectivity to the lower layer becomes insufficient
Solution Approach 1:
The patent combines the photoresist and hard mask functions into a single integrated layer. The polymer composition serves dual purposes: as a photoresist for patterning and as a hard mask for etching protection, eliminating the need for separate thin photoresist and thick hard mask layers while maintaining both pattern stability and etch selectivity
Solution Approach 2:
The patent uses composite polymer materials containing aromatic compounds with specific structural features (such as polycyclic aromatic hydrocarbons) that provide both the solubility and patterning properties of photoresist and the chemical resistance properties of hard mask materials, achieving dual functionality through material composition
2Manufacturing precision
If a hard mask process is introduced to improve etch selectivity, then sufficient selection ratio is obtained, but the device complexity and production cost increase
Solution Approach 1:
The patent merges the photoresist coating process and hard mask deposition process into a single solution-based coating step. The polymer composition is applied directly to the substrate through spin-coating or similar methods, followed by a single baking step that simultaneously completes both photoresist formation and hard mask creation, reducing process complexity
Solution Approach 2:
The patent creates a universal material that performs multiple functions: it serves as both the photoresist layer for lithographic patterning and the hard mask layer for etching protection. This multi-functional material eliminates the need for separate process steps and materials, reducing both device complexity and production cost
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel polymer and composition enable efficient etching with high selectivity and heat stability, reducing production costs by simplifying the hard mask process and allowing for mass production of high-purity films, even at low temperatures, while maintaining excellent optical and mechanical properties.
Implementation Method 1
capable of being applied through a solution process like spin-coating
Implementation Method 2
combined with a crosslinking agent and acid catalyst in a composition
Data Source
AI summary
The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.