Polymer Surface Treatment Composition for Semiconductor CMP Residue Removal
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Solution Overview
Problem
Chemical mechanical polishing (CMP) processes leave behind organic residues on semiconductor substrates, which can degrade the electrical characteristics and reliability of semiconductor devices, necessitating an effective cleaning method to remove these impurities.
Innovation Solution
A surface treatment composition containing a polymer with a specific constituent unit, represented by Formula (1), and water is used to effectively remove organic residues from silicon oxide or polysilicon surfaces by changing the hydrophobic surface to hydrophilic, facilitating the removal of contaminants through chemical interaction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP polishing is performed using conventional slurries, then planarization is achieved, but organic residues remain on the substrate surface
Solution Approach 1:
The patent applies preliminary action by incorporating specific polymers (polyvinyl alcohol and carboxymethyl cellulose) into the polishing slurry before the CMP process. These polymers are pre-selected to prevent organic residue adhesion to the substrate surface during polishing, thereby addressing the residue problem before it occurs rather than requiring separate cleaning steps.
Solution Approach 2:
The patent uses polymers as intermediary substances between the abrasive particles and the substrate surface. These polymer intermediaries modify the interaction mechanism, allowing effective polishing while preventing organic residue accumulation on the substrate. The polymers act as a mediating layer that facilitates material removal without causing harmful residue deposition.
2Object-generated harmful factors
If cleaning steps are introduced after CMP to remove impurities, then substrate cleanliness improves, but process complexity and time increase
Solution Approach 1:
The patent merges the polishing and cleaning functions into a single integrated CMP process. By incorporating specific polymers into the polishing slurry, the process simultaneously achieves surface planarization and prevents organic residue formation, eliminating the need for separate cleaning steps and reducing overall process complexity.
Solution Approach 2:
The polishing slurry is designed with multi-functionality, serving both as a polishing agent for planarization and as a cleaning agent that prevents organic residue adhesion. The polymer-containing slurry performs multiple functions (material removal, surface planarization, and contamination prevention) in a single application, reducing the number of required process steps.
3Productivity
If conventional polishing slurries are used, then polishing efficiency is maintained, but electrical characteristics of semiconductor devices deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing slurry by incorporating specific polymers (polyvinyl alcohol and carboxymethyl cellulose) at controlled concentrations. This parameter modification maintains the mechanical polishing efficiency while fundamentally altering the surface interaction chemistry to prevent organic residue formation, thereby preserving electrical characteristics.
Solution Approach 2:
The patent uses composite polishing slurries that combine abrasive particles with specific polymer materials. This composite formulation maintains the cutting and planarization capabilities of conventional slurries while adding the functional properties of polymers that prevent organic residue adhesion, thus maintaining productivity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The surface treatment composition significantly reduces organic residues on semiconductor substrates, enhancing the reliability and electrical characteristics of semiconductor devices by effectively removing contaminants, as demonstrated in Examples and Comparative Examples.
Implementation Method 1
by changing the hydrophobic surface to hydrophilic, facilitating the removal of contaminants through chemical interaction
Implementation Method 2
facilitating the removal of contaminants through chemical interaction
Data Source
AI summary
To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing,in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.