Polymer Underlayer Film for Semiconductor Lithography Etching
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges with photoresist film thickness, etching selectivity, thermal stability, and solubility issues, particularly in achieving high-resolution patterns below 30 nm, where existing hard masks like CVD-deposited films are costly and have limitations in etching resistance and uniformity.
Innovation Solution
A novel polymer with a specific repeating unit structure, represented by Chemical Formula 1, is developed for an underlayer film composition that provides excellent thermal stability, etching resistance, and solubility, enabling improved coating uniformity and storage stability, suitable for use as a spin-on hard mask in semiconductor multilayer lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thinner photoresist film is used to achieve high-resolution patterns, then resolution is improved, but etching selectivity deteriorates
Solution Approach 1:
The patent introduces an underlayer film as an intermediary between the photoresist and the layer to be etched. This underlayer film provides the necessary etching resistance and selectivity that thin photoresist films cannot achieve alone, while allowing the photoresist to maintain its thin profile for high-resolution patterning.
Solution Approach 2:
The patent uses composite material structures combining organic underlayer films with inorganic hard masks, or multi-layer underlayer configurations, to achieve both the resolution benefits of thin photoresist and the etching performance of thicker protective layers.
2Reliability
If a CVD-deposited hard mask is used to achieve good etching resistance, then etching selectivity is improved, but manufacturing cost and device complexity increase
Solution Approach 1:
The patent employs spin-on organic underlayer films that can be applied quickly and removed easily after serving their purpose as etching masks, replacing expensive and complex CVD hard masks for applications where the underlayer is sacrificial or temporary.
Solution Approach 2:
The patent replaces mechanical/physical vapor deposition processes (CVD) with chemical solution-based spin-coating processes to form underlayer films, simplifying the manufacturing equipment and reducing process complexity while maintaining adequate etching performance.
3Ease of manufacture
If a spin-on hard mask is used to reduce initial investment cost, then ease of manufacture is improved, but etching resistance deteriorates
Solution Approach 1:
The patent creates composite structures where spin-on organic underlayer films are combined with inorganic hard mask materials, achieving the ease of application of spin-coating while obtaining the superior etching resistance of inorganic materials.
Solution Approach 2:
The patent modifies the chemical composition and molecular weight parameters of the polymer materials used in spin-on underlayer films to enhance their etching resistance while maintaining their ease of application and film-forming properties.
4Reliability
If high carbon content polymer is used to improve etching resistance, then etching selectivity is improved, but solubility in organic solvents deteriorates
Solution Approach 1:
The patent optimizes the molecular weight and chemical structure parameters of polymers to achieve the right balance between etching resistance (requiring high carbon content) and solubility (requiring appropriate molecular weight and functional groups for organic solvent compatibility).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel polymer-based underlayer film composition enhances etching resistance, thermal stability, and coating uniformity, reducing pattern collapse and film loss during high-temperature processes, while maintaining high solubility in organic solvents, thus improving storage stability and line compatibility in semiconductor manufacturing.
Implementation Method 1
the novel polymer of the present invention has optimized etch selection ratio and planarization property, and excellent thermal resistance
Implementation Method 2
a spin-on hard mask composition that is easily capable of performing spin-coating using a track system
Implementation Method 3
the hard mask formed by the chemical vapor deposition has good physical properties in view of etching selectivity or etching resistance
Data Source
AI summary
The present invention relates to a polymer having a novel structure used in a process for manufacturing a semiconductor and a display; an underlayer film composition for a process for manufacturing a semiconductor and a display, including the same; and a method for manufacturing a semiconductor element by using the same. The novel polymer of the present invention has both optimized etch selection ratio and planarization properties and excellent heat resistance, and thus the underlayer film composition including the same can be used as a hard mask in a semiconductor multilayer lithography process.