Polymeric Inhibitor for Selective Area Deposition
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving efficient and reliable selective deposition techniques, which are necessary for reducing processing costs and enhancing scaling in narrow structures. Existing methods often require expensive multi-step lithographic techniques and struggle with selectivity and defectivity.
Innovation Solution
The method involves providing a substrate with a first surface and a second surface in a reaction chamber and contacting it with a first precursor containing an amine compound with at least two amine groups and a second precursor containing at least one thioanhydride. This process selectively forms a passivation layer, such as a polyimide film, on the first surface relative to the second surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional subtractive patterning processes are used, then device dimensions can be patterned, but processing costs increase and multiple lithographic steps are required
Solution Approach 1:
The patent inverts the conventional subtractive patterning approach by using additive selective deposition. Instead of depositing a blanket layer and removing material through etching, the process selectively deposits material only where needed using surface-mediated atomic layer deposition (SM-ALD) with inhibitor layers, thereby eliminating multiple lithographic steps and reducing processing complexity
Solution Approach 2:
The patent applies preliminary action by pre-forming inhibitor layers on specific substrate regions before the selective deposition step. This preliminary patterning of inhibitor layers enables subsequent selective deposition to occur without requiring expensive multi-step lithographic techniques, thereby reducing both cost and process complexity
2Productivity
If selective deposition techniques are implemented, then processing steps can be reduced, but selectivity and defectivity control remain challenging
Solution Approach 1:
The patent introduces inhibitor layers as intermediary substances that mediate between the substrate and the depositing material. These inhibitor layers selectively prevent deposition on unwanted regions while allowing deposition on desired regions, thereby achieving high selectivity and reduced defectivity. The inhibitor layers act as temporary mediators that can be removed afterward, enabling precise spatial control of the deposited material
Solution Approach 2:
The patent utilizes parameter changes in the SM-ALD process, specifically controlling temperature, pressure, and precursor flow rates to optimize selective deposition. By carefully adjusting these parameters, the process achieves high selectivity between regions with and without inhibitor layers, while minimizing defects such as pinholes or non-uniform deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective deposition of a passivation layer with improved selectivity and reduced defectivity, potentially reducing processing costs and enhancing the scalability of semiconductor devices.
Implementation Method 1
contacting the substrate with a first precursor comprising an amine compound comprising at least two amine groups and contacting the substrate with a second precursor comprising at least one thioanhydride, wherein contacting the substrate with the first and second precursors forms the film selectively on the first surface relative to the second surface
Data Source
AI summary
Methods and apparatus are disclosed for forming a passivation layer on a substrate, comprising, providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, contacting the substrate with a first precursor comprising an amine compound comprising at least two amine groups and contacting the substrate with a second precursor comprising at least one thioanhydride, wherein contacting the substrate with the first and second precursors forms the film selectively on the first surface relative to the second surface.