Polymeric Polyamine CMP Composition for Copper Polishing
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) compositions in the semiconductor industry face challenges in achieving high material removal rates with low static etching rates and friction, particularly when polishing metal-containing substrates like copper layers, while also minimizing erosion and dishing effects.
Innovation Solution
A CMP composition comprising inorganic or organic particles, a polymeric polyamine or its salt with specific pendant groups, and an aqueous medium, where the polymeric polyamine is limited to no more than 4 wt.%, is used to enhance polishing performance by reducing friction and improving material removal rates and selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP compositions are used to achieve high material removal rates, then polishing efficiency is improved, but static etching rates and erosion increase
Solution Approach 1:
The patent modifies the chemical composition parameters by introducing a specific polymeric polyamine with carboxylate-containing pendant groups and limiting conventional polyamine content to ≤4 wt.%. This parameter change optimizes the chemical interaction with copper substrates, achieving high material removal rates while suppressing static etching through controlled chemical affinity and reaction kinetics.
Solution Approach 2:
The invention creates a composite CMP composition system combining inorganic/organic particles with a specialized polymeric polyamine structure. This composite approach integrates mechanical abrasion from particles with controlled chemical action from the polymeric polyamine, achieving synergistic effects that improve material removal while reducing harmful etching and erosion.
2Productivity
If conventional CMP compositions are used to increase material removal rate, then polishing speed is improved, but friction force increases
Solution Approach 1:
The patent changes the chemical composition parameters by introducing a polymeric polyamine with carboxylate groups that have specific lubricating properties. This modification reduces the coefficient of friction between the polishing pad and substrate while maintaining effective material removal through optimized chemical-mechanical interaction.
3Productivity
If conventional CMP compositions are used to achieve high material removal rates, then polishing efficiency is improved, but dishing and erosion effects worsen
Solution Approach 1:
The invention optimizes chemical composition parameters by limiting conventional polyamines to ≤4 wt.% and introducing a polymeric polyamine with carboxylate groups. This parameter optimization controls the chemical etching rate to match the mechanical removal rate, preventing excessive material removal from high-energy zones that causes dishing and erosion, thereby maintaining surface uniformity.
Solution Approach 2:
The polymeric polyamine with carboxylate groups provides feedback control by selectively binding to copper ions and reaction products during polishing. This binding action regulates the chemical reaction rate in real-time, preventing runaway etching that leads to dishing and erosion, while maintaining consistent material removal across the substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP composition achieves a significant reduction in friction force by at least 15% and improves material removal rates and selectivity, effectively addressing the challenges of static etching rates and erosion during the polishing of metal-containing substrates, particularly copper layers.
Implementation Method 1
The CMP composition achieves a significant reduction in friction force by at least 15%
Implementation Method 2
chemical mechanical polishing (abbreviated as CMP) is a well-known technology applied in fabricating advanced photonic, microelectromechanical, and microelectronic materials and devices
Implementation Method 3
low hot static etching rates of metal-containing substrate (metal-hSER) and low cold static etching rates of metal-containing substrate (metal-cSER)
Data Source
Figure 1
AI summary
A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (-COOR1), sulfonate (-SO3R2), sulfate (-O-SO3R3), phosphonate (-P(=O)(OR4)(OR5) ), phosphate (-O-P(=O)(OR6)(OR7) ), carboxylic acid (-COOH), sulfonic acid (-SO3H), sulfuric acid (-O-SO3-), phosphonic acid (-P(=O)(OH)2), phosphoric acid (-O-P(=O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.