Polymeric Polyamine CMP Slurry for Copper Polishing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current chemical mechanical polishing (CMP) compositions in the semiconductor industry face challenges in achieving high material removal rates with low static etching rates and friction, particularly when polishing copper-containing layers in multilevel structures, while also minimizing erosion and dishing effects.
Innovation Solution
A CMP composition comprising inorganic or organic particles, a polymeric polyamine or its salt with specific pendant groups, and an aqueous medium, which reduces friction force by at least 15% and enhances polishing performance by optimizing the ratio of material removal rate to static etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP compositions are used to increase material removal rate, then polishing efficiency improves, but static etching rates and friction increase
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition parameters of the CMP slurry, specifically using polymeric polyamines with controlled molecular weight (1,000-1,000,000 Da) and nitrogen content (1-20%), along with specific abrasive particle sizes (0.01-10 μm) and concentrations, to optimize the balance between material removal rate and static etching rates
Solution Approach 2:
The patent employs composite materials by formulating a multi-component CMP composition that includes polymeric polyamines, inorganic or organic abrasives, chelating agents, corrosion inhibitors, and pH buffers working synergistically to achieve high material removal while controlling static etching and friction
2Productivity
If polishing pressure is increased to improve material removal rate, then productivity increases, but erosion and dishing effects worsen
Solution Approach 1:
The patent utilizes parameter changes by optimizing the particle size distribution (0.01-10 μm) and concentration (0.1-10 wt%) of abrasives, along with controlling slurry viscosity through polymeric polyamine selection, to enable effective material removal at reduced polishing pressures, thereby minimizing erosion and dishing
Solution Approach 2:
The patent applies local quality by using polymeric polyamines with specific functional groups that provide localized chemical activity at the polishing interface, enhancing material removal through chemical-mechanical synergy while reducing the mechanical pressure required, thus preventing erosion and dishing
3Manufacturing precision
If friction force is reduced to minimize erosion, then manufacturing precision improves, but material removal rate decreases
Solution Approach 1:
The patent applies mechanics substitution by replacing purely mechanical abrasion with a chemical-mechanical process where polymeric polyamines chemically interact with copper-containing layers to facilitate material removal, reducing reliance on high friction and mechanical pressure while maintaining high productivity
Solution Approach 2:
The patent uses parameter changes by adjusting the chemical composition parameters including polymeric polyamine concentration (0.01-10 wt%), pH (3-11), and additive concentrations to optimize the chemical reactivity at the polishing interface, enabling efficient material removal with reduced friction forces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP composition achieves improved polishing performance with reduced friction and minimized erosion and dishing, specifically for copper-containing layers, by using a polymeric polyamine with specific pendant groups and inorganic or organic particles, resulting in higher material removal rates and lower static etching rates.
Implementation Method 1
a CMP composition which is capable to reduce the friction force during the CMP process
Implementation Method 2
CMP utilizes the interplay of chemical and mechanical action to achieve the planarity of the to-be-polished surfaces
Implementation Method 3
Mechanical action is usually carried out by a polishing pad
Data Source
AI summary
A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(═O)(OR4)(OR5)), phosphate (—O—P(═O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(═O)(OH)2), phosphoric acid (—O—P(═O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.