Polymeric Residue Removal Composition for Electronic Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for removing post-plasma etch polymeric residue from electronic devices are inadequate as they often excessively etch dielectric layers, corrode metal layers, have short bath life, and are not effective for all types of residues, leading to reduced device performance and processing inefficiencies.
Innovation Solution
A composition comprising 0.05 to 5% wt of a fluoride source, 40 to 95% wt of a solvent mixture of polyhydric alcohol and ether, 5 to 50% wt water, and a pH adjuster chosen from carbonic acid or its salt and a polycarboxylic acid and a base, with a pH of 4 to 8, is used to effectively remove polymeric residue without significantly etching dielectric layers or corroding metals, maintaining stable etch rates over time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluoride-based removers are used to remove polymeric residue, then the residue removal effectiveness is improved, but excessive etching of dielectric layers and corrosion of metal layers occur
Solution Approach 1:
The patent modifies the chemical parameters of the remover by adjusting pH to a neutral range (7-8) and using specific fluoride sources (ammonium fluoride, ammonium bifluoride, or tetramethylammonium fluoride) combined with non-oxidative surfactants. This parameter optimization allows effective polymeric residue removal while minimizing harmful etching and corrosion effects on dielectric and metal layers.
Solution Approach 2:
The patent introduces non-oxidative surfactants as intermediary substances that facilitate residue removal through surfactant action rather than direct aggressive chemical attack. These surfactants act as mediators between the fluoride source and the polymeric residue, enabling effective cleaning while protecting sensitive substrate materials from excessive etching and corrosion.
2Ease of manufacture
If conventional cleaning processes are used, then the process simplicity is maintained, but they cannot effectively remove extensively cross-linked polymeric residue containing metal
Solution Approach 1:
The patent changes the chemical parameters by using neutral pH (7-8) fluoride-based compositions with specific surfactant additives. This parameter modification enables the simple cleaning process to effectively remove extensively cross-linked polymeric residue containing metal, overcoming the limitations of conventional acidic or basic cleaners.
Solution Approach 2:
The patent creates a composite cleaning system combining fluoride sources (ammonium fluoride, ammonium bifluoride, or tetramethylammonium fluoride) with non-oxidative surfactants. This composite formulation synergistically combines the residue-dissolving capability of fluorides with the surfactant action of the non-oxidative agents, achieving effective removal of complex cross-linked polymers while maintaining process simplicity.
3Reliability
If aggressive removers are used to ensure complete residue removal, then the cleaning effectiveness is improved, but the bath life is reduced and processing time is increased
Solution Approach 1:
The patent optimizes the chemical parameters by formulating neutral pH (7-8) compositions with controlled fluoride concentrations (0.05-5% wt) and specific surfactant additives. This parameter optimization achieves complete residue removal effectiveness while extending bath life and reducing processing time, avoiding the need for prolonged exposure to aggressive cleaners.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes polymeric residue with minimal etching of dielectric layers and no corrosion of metal layers, providing a stable etch rate and long bath life, thus enhancing the processing efficiency and device performance.
Implementation Method 1
Fluoride-based removers are conventionally used to remove such post plasma etching residue
Implementation Method 2
The resist is exposed to patterned actinic radiation. The exposed regions are subject to a dissolution by a suitable developer liquid
Implementation Method 3
40 to 95 %wt of a solvent mixture including a polyhydric alcohol and an ether
Implementation Method 4
a pH adjuster chosen from (1) carbonic acid or its salt and (2) a polycarboxylic acid and a base where the molar ratio of the polycarboxylic acid to the base is 1:1 to 1:10; wherein the composition has a pH of 4 to 8
Data Source
AI summary
Compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices are provided. These compositions and methods are particularly suitable for removing polymer residues from electronic devices following plasma etch processes.