Polymeric Topcoat via iCVD for Block Copolymer DSA
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Solution Overview
Problem
Current directed self-assembly (DSA) technologies face challenges in achieving sub-10 nm resolution and scaling, particularly with block copolymers like PS-b-PMMA, due to limitations in understanding material processing and the lack of specialized tools and processes for nanoscale manufacturing, which hinders widespread implementation in the semiconductor and hard drive industries.
Innovation Solution
The use of initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) to form a polymeric topcoat on block copolymer films, enabling high-resolution nanoscale patterning by depositing a conformal, ultra-thin, pinhole-free coating that maintains the integrity of the underlying block copolymer layer and allows for perpendicular orientation of structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional lithographic materials and processes are used to define chemical pre-patterns, then manufacturing processes can be integrated with existing infrastructure, but resolution is limited to 20-40 nm scale
Solution Approach 1:
The patent segments the lithographic process into two distinct stages: first, traditional lithography defines chemical pre-patterns at 20-40 nm scale that are compatible with existing infrastructure; second, block copolymer self-assembly is directed by these pre-patterns to achieve sub-10 nm resolution. This segmentation allows each stage to optimize for its specific function without requiring complete process redesign.
Solution Approach 2:
The patent implements a nested structure where block copolymer self-assembly (achieving sub-10 nm resolution) is directed and controlled by lithographically defined chemical pre-patterns (at 20-40 nm scale). The smaller-scale high-resolution process is nested within the larger-scale existing manufacturing process, allowing both to coexist and work together.
2Manufacturing precision
If block copolymer self-assembly is used to achieve sub-10 nm resolution, then resolution increases by three to four-fold, but capital equipment costs become prohibitively high
Solution Approach 1:
The patent leverages the self-assembling properties of block copolymers to automatically form nanostructures at sub-10 nm scales without requiring additional expensive equipment. The materials self-organize into desired patterns when directed by chemical pre-patterns, eliminating the need for costly new fabrication facilities while achieving the required resolution.
3Ease of manufacture
If DSA technology is implemented to achieve nanoscale dimensions, then manufacturing cost is drastically reduced, but processing latitude and degrees of perfection are insufficient
Solution Approach 1:
The patent performs preliminary actions by defining chemical pre-patterns using traditional lithography before introducing block copolymers. These pre-patterns serve as templates that guide the self-assembly process, ensuring that the low-cost DSA approach produces patterns with sufficient perfection and reliability for manufacturing requirements.
Solution Approach 2:
The patent introduces chemical pre-patterns as an intermediary between traditional lithography and block copolymer self-assembly. These pre-patterns mediate the interaction between the two processes, providing the necessary guidance to achieve both cost-effectiveness and pattern perfection simultaneously.
4Manufacturing precision
If existing manufacturing processes are used, then infrastructure compatibility is maintained, but resolution cannot reach sub-10 nm scale
Solution Approach 1:
The patent segments the resolution achievement into two parts: traditional lithography handles infrastructure-compatible patterning at 20-40 nm, while block copolymer self-assembly provides the additional sub-10 nm resolution. This segmentation allows the system to maintain infrastructure compatibility while still achieving high resolution through the combination of approaches.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the resolution and scalability of DSA, enabling the creation of high-resolution patterns suitable for next-generation semiconductor and data storage devices without the need for expensive new fabrication facilities, and is compatible with existing manufacturing processes.
Implementation Method 1
heating or irradiating an initiator, thereby producing a gaseous free radical initiator
Implementation Method 2
heating or irradiating an initiator, thereby producing a gaseous free radical initiator
Implementation Method 3
contacting the block copolymer film with the gaseous free radical initiator and a gaseous monomer, thereby forming a cross-linked topcoat
Implementation Method 4
initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) to form a polymeric topcoat on block copolymer films
Data Source
AI summary
Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.