Polyorganosiloxane Coating for Thin Film Transistor Interface

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Solution Overview

Problem

Existing flat panel displays, such as LCDs and OLEDs, face challenges in achieving improved surface characteristics and interface performance in thin film transistors due to suboptimal interface characteristics between semiconductor and gate insulator materials.

Innovation Solution

A coating liquid containing a polyorganosiloxane represented by Chemical Formula 1 is used, which includes a siloxane structure with hydrophobic functional groups, applied to form a film with improved surface characteristics and mechanical properties, enhancing the performance of thin film transistors by modifying the interface between the semiconductor and gate insulator.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional coating materials are used to form a film on the gate insulator, then the manufacturing process is simple, but the interface characteristics between semiconductor and gate insulator are suboptimal

Engineering Contradiction:
Improveinterface characteristicsVSAvoidcoating liquid composition
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses a composite coating liquid containing polyorganosiloxane combined with other organic compounds to form a multi-functional film that simultaneously provides hydrophobicity, flexibility, and improved interface characteristics between the gate insulator and semiconductor layer

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the chemical composition parameters of the coating liquid by incorporating specific polyorganosiloxane structures with hydrophobic functional groups, changing the surface properties of the film to achieve better interface characteristics and device performance

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If a film with high hydrophobicity is formed to improve surface characteristics, then contact angle increases, but the film may become less flexible

Engineering Contradiction:
Improvesurface characteristicsVSAvoidfilm flexibility
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent applies local quality by creating a film with differentiated properties: the surface layer exhibits high hydrophobicity for improved surface characteristics, while the bulk composition maintains flexibility through the polyorganosiloxane structure, achieving both surface performance and mechanical flexibility

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polyorganosiloxane coating liquid improves the hydrophobicity and flexibility of the film, leading to enhanced mechanical characteristics and electrical performance of thin film transistors, with a cured film exhibiting high contact angles and improved scratch resistance.

Implementation Method 1

The polyorganosiloxane may include a siloxane structure unit having a —Si—O—Si bond and may be an organic/inorganic compound of a three-dimensional reticular structure having a SiO3/2 moiety. The moiety may have a hydrophobic functional group

Methodology Applied
Scientific EffectHydrophobicity: Hydrophobe

Data Source

PatentUS11245082B2Coating liquid and film and thin film transistor and electronic device
Publication Date: 2022.02.08 SAMSUNG ELECTRONICS CO LTD
  • US11245082B2 patent drawing
  • US11245082B2 patent drawing

AI summary

Disclosed are a coating liquid including polyorganosiloxane represented by Chemical Formula 1, a film obtained therefrom, a stacked structure including the same, a thin film transistor, and an electronic device.(R1R2R3SiO1/2)M1(R4R5SiO2/2)D1(R6SiO3/2)T1(R7SiO3/2)T2(R8SiO3/2)T3(SiO4/2)Q1  [Chemical Formula 1]In Chemical Formula 1, R1 to R8, M1, D1, T1 to T3, and Q1 are the same as defined in the detailed description.