Polysilane-Polysiloxane Resin Composition for Uniform Semiconductor Films

The patent changes the chemical parameters of the composition by incorporating specific silicon compounds (such as silicon oxides, silicon nitrides, silicon carboxylates) and organic compounds with carboxylic acid groups. This chemical parameter modification enables the film to be easily wet etched while maintaining excellent in-plane thickness uniformity, resolving the contradiction between ease of manufacture and manufacturing precision.

The patent uses composite materials by combining silicon-containing compounds (silicon oxides, silicon nitrides, silicon carboxylates) with organic compounds having carboxylic acid groups. This composite approach creates a film that possesses both the desired etchability and the required thickness uniformity, simultaneously achieving ease of manufacture and manufacturing precision.

The patent modifies the chemical composition parameters by incorporating specific silicon compounds and organic compounds with carboxylic acid groups. This parameter change results in a film with excellent in-plane thickness uniformity that maintains its protective function during fine processing, resolving the contradiction between substrate protection and manufacturing precision.

The patent employs a composition that forms a removable protective film. The film serves its protective function temporarily during fine processing and then can be easily removed by wet etching with a stripping liquid. This disposable approach provides effective substrate protection while achieving the required thickness uniformity.