Silicon Nitrogeneous Film Processing for Low-Temperature Trench Filling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for manufacturing silicon nitride films struggle to form films in narrow and high aspect ratio trenches at low process temperatures, while also being resistant to acid etching and maintaining high refractive index and low oxygen content.
Innovation Solution
A method involving the application of a polysilazane and solvent composition, followed by electron beam irradiation, optional UV light or plasma processing, and heating in a non-oxidizing atmosphere to form a silicon nitrogeneous film that can be used in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional CVD or sol-gel methods are used to form silicon nitride films, then the films can be formed at low process temperatures, but they cannot effectively fill narrow and high aspect ratio trenches
Solution Approach 1:
The patent changes the physical and chemical parameters of the deposition process by using a silane-based composition with specific molecular weight and structure, combined with electron beam irradiation and plasma treatment, enabling the film to penetrate and fill narrow high aspect ratio trenches while maintaining process simplicity
Solution Approach 2:
The patent uses a composite approach by combining silane polymer, solvent, and crosslinking agents to create a composition that can be deposited as a solution and then converted into a silicon nitride film through thermal processing, enabling better trench filling compared to conventional CVD methods
2Reliability
If high temperature processing is used to form silicon nitride films with good etch resistance, then the films achieve high refractive index and low oxygen content, but the process temperature becomes too high for advanced semiconductor devices
Solution Approach 1:
The patent changes the chemical composition parameters by using a specific silane-based precursor with controlled molecular weight and structure, which enables the formation of high-quality silicon nitride films with good etch resistance at lower processing temperatures (below 400°C)
Solution Approach 2:
The patent replaces conventional high-temperature thermal processing with a combination of electron beam irradiation and plasma treatment, which provides the energy needed for film formation and crosslinking at lower temperatures, achieving good etch resistance without requiring high process temperatures
3Manufacturing precision
If electron beam irradiation is applied to the coating film, then the silicon nitrogeneous film achieves high refractive index and low oxygen content, but the process complexity increases
Solution Approach 1:
The patent makes the electron beam irradiation step serve multiple functions: it acts as both the deposition energy source and the crosslinking mechanism, while also controlling the film's refractive index and oxygen content, thereby achieving high manufacturing precision without proportionally increasing process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of silicon nitrogeneous films with high refractive index and low oxygen content, suitable for narrow trenches and acid etching, improving semiconductor device yield and process efficiency.
Implementation Method 1
irradiating an electron beam onto the coating film under a non-oxidizing atmosphere
Implementation Method 2
irradiating an electron beam onto the coating film under a non-oxidizing atmosphere
Implementation Method 3
irradiating a vacuum ultra-violet light onto the electron beam irradiated coating film under a non-oxidizing atmosphere
Implementation Method 4
plasma processing onto the electron beam irradiated coating film
Implementation Method 5
heating the treated coating film in the previous step under a non-oxidizing atmosphere
Data Source
AI summary
A method is disclosed for the preparation of a silicon nitrogeneous film. Polysilazane film is exposed to an electron beam irradiation and subsequently to at least one process selected from the group consisting of a vacuum ultra-violet light irradiation and a plasma processing. The treated film is heated under a non-oxidizing atmosphere to manufacture a silicon nitrogeneous film. The silicon nitrogeneous film is able to be formed at low process temperature. Further, the silicon nitrogeneous film has a high refractive index and low oxygen content.