Polysilazane Edge Removal Composition for Semiconductor Substrates
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Solution Overview
Problem
The existing compositions for treating semiconductor substrates coated with polysilazane face challenges in efficiently removing polysilazane, leading to hump height issues during film sintering, potential defects, and device clogging due to waste liquid gelation, along with stability concerns from gas generation.
Innovation Solution
A composition comprising 98-99.8% trimethylbenzene and 0.001-0.3% fluorine-based surfactant, which improves the straightness of the polysilazane removal boundary and prevents film thickness humps, reducing defect rates and maintaining stability by controlling reactivity and aggregation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a co-solvent mixture such as PGMEA is used to remove polysilazane, then the polysilazane can be removed from the substrate, but hump height occurs at the boundary where polysilazane is removed, causing cracks or peeling during sintering
Solution Approach 1:
The patent changes the chemical composition parameters of the treatment solution by using trimethylbenzene as the primary solvent (98-99.8% by weight) instead of conventional co-solvent mixtures like PGMEA. This parameter change in solvent composition improves the dissolution capability for polysilazane while maintaining boundary straightness and preventing hump formation during sintering.
Solution Approach 2:
The patent creates a composite treatment solution by combining trimethylbenzene with a fluorine-based surfactant (0.001-0.3% by weight). This composite material enhances the removal effectiveness of polysilazane while the surfactant component helps maintain smooth boundaries and prevents hump height formation at the removal boundary.
2Ease of manufacture
If conventional compositions are used for polysilazane removal, then the removal process can be performed, but waste liquid gelation occurs causing clogging of the coating device
Solution Approach 1:
The patent changes the chemical parameters of the treatment solution by using trimethylbenzene, which has different solvation properties compared to conventional solvents like PGMEA. This parameter change prevents waste liquid gelation that occurs with conventional compositions, thereby preventing clogging of the coating device and reducing the need for frequent maintenance operations.
3Productivity
If polysilazane is removed using conventional methods, then the removal can be performed, but gases such as silane, hydrogen, and ammonia are generated exceeding spontaneous ignition limits, affecting stability
Solution Approach 1:
The patent changes the chemical composition parameters by using trimethylbenzene as the primary solvent, which alters the decomposition behavior of polysilazane during removal. This parameter change reduces the generation of flammable gases such as silane, hydrogen, and ammonia, keeping gas generation below spontaneous ignition limits and improving the stability of the waste tank system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition ensures uniform treatment of the semiconductor substrate, significantly reducing defect rates and improving productivity yield by maintaining film quality and preventing polysilazane penetration, thereby enhancing the edge bead removal process.
Implementation Method 1
a fluorine-based surfactant
Implementation Method 2
excellent solubility in polysilazane that need to be removed
Data Source
AI summary
The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.