Polysilazane Composition for Siliceous Film Uniformity
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Solution Overview
Problem
The miniaturization of electronic devices leads to increased defects and film thickness variations in siliceous films, particularly when formed in the presence of ozone, which affects the efficiency and yield of electronic device manufacturing.
Innovation Solution
A polysilazane composition with a specific ratio of N—Si bonds (NA3/NA2 between 1.8 and 6.0) is used to form siliceous films, which are then applied to a substrate and heated to produce a film with reduced voids and thickness variations, even in ozone-containing atmospheres, using a method that includes infrared absorption spectrum analysis for bond determination and a solvent-based coating process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a siliceous film is formed using a conventional polysilazane composition in the presence of ozone, then the film formation process can proceed, but film thickness variation and defects increase
Solution Approach 1:
The invention changes the chemical structure parameters of polysilazane by controlling the ratio of NA3 to NA2 (number of N atoms with 3 N-Si bonds to number of N atoms with 2 N-Si bonds) within 1.8 to 6.0. This parameter change makes the polysilazane less reactive toward ozone, thereby suppressing film thickness variation and defects when formed in ozone-containing atmospheres.
Solution Approach 2:
The invention introduces specific structural characteristics (NA3/NA2 ratio) at local molecular positions within the polysilazane chain. This local structural quality control creates regions with optimized ozone resistance, which collectively improve the overall film uniformity and reduce defects in the presence of ozone.
2Productivity
If the device rule is miniaturized to improve electronic device performance, then device efficiency increases, but defects in siliceous films increase
Solution Approach 1:
By changing the polysilazane molecular structure parameters (NA3/NA2 ratio), the invention enables reliable film formation even at miniaturized device dimensions. The modified polysilazane structure maintains film quality and reduces defects despite the challenges posed by smaller feature sizes and continued presence of ozone in the manufacturing environment.
3Ease of manufacture
If a polysilazane composition is used to form siliceous films, then the process is simple and cost-effective, but film thickness variation and defects occur in the presence of ozone
Solution Approach 1:
The invention maintains the simplicity of the composition-based film formation process while improving manufacturing precision by changing the polysilazane structure parameters. The modified polysilazane with controlled NA3/NA2 ratio can be used in the same simple coating and heating process, but now produces uniform films with reduced defects even in ozone-containing atmospheres.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting siliceous films exhibit reduced film thickness variation and voids, minimal shrinkage, and fewer cracks, thereby improving the yield and reliability of electronic devices.
Implementation Method 1
a composition comprising a silicon-containing polymer such as polysilazane, polysiloxane, polysiloxazane, or polysilane is coated on a substrate surface or the like and then baked, whereby silicon that is contained in the polymer is oxidized to form a siliceous film
Implementation Method 2
the peak existing in 3500 to 3250 cm−1 corresponding to N—H bonds and the peak existing in 1065 to 695 cm−1 corresponding to Si—N bonds of the infrared absorption spectrum of the polysilazane are defined as absorbance corresponding to N—H bonds and Si—N bonds
Data Source
AI summary
To provide a polysilazane and a siliceous film-forming composition which can suppress film thickness variation and voids even in the ozone containing atmosphere. [Means for Solution] A polysilazane comprising N—Si bonds, wherein the ratio (NA3/NA2) of the number of N atoms having 3 N—Si bonds (NA3) to the number of N atoms having 2 N—Si bonds (NA2) is 1.8 to 6.0.