Polysilicon Film Grain Control via Buffer Grooves
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Solution Overview
Problem
Prior methods for manufacturing polysilicon films result in uneven grain sizes and irregular grain arrangements, affecting the display quality of polysilicon film-based display panels due to the low temperature polysilicon technology's inherent defects.
Innovation Solution
A method involving the formation of regularly arranged grooves on a buffer layer, followed by the deposition of an amorphous silicon film and subsequent crystallization treatment using optical annealing, such as excimer laser annealing, to control grain size and arrangement, ensuring even and regular grain formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polysilicon manufacturing methods are used, then the polysilicon film can be formed, but the grain sizes are uneven and grain arrangement is irregular, affecting display quality
Solution Approach 1:
The patent applies preliminary action by forming regularly arranged grooves on the buffer layer before depositing the amorphous silicon film. These pre-formed grooves serve as templates that guide the subsequent crystallization process, ensuring uniform grain sizes and regular grain arrangements in the final polysilicon film without requiring complex post-processing steps.
Solution Approach 2:
The patent introduces an intermediary element - the regularly arranged grooves on the buffer layer - that mediates between the amorphous silicon film deposition and the crystallization process. These grooves act as a structural intermediary that transfers the desired regular pattern to the polysilicon grains during optical annealing, achieving uniform grain structure without directly controlling each grain formation event.
2Reliability
If optical annealing is applied to crystallize the amorphous silicon film, then polysilicon film is formed, but without groove guidance the grains form irregularly
Solution Approach 1:
The patent applies segmentation by dividing the buffer layer surface into distinct regions separated by regularly arranged grooves. This segmentation creates isolated zones where amorphous silicon can crystallize independently, ensuring each grain forms with uniform size and regular spacing. The grooves physically segment the crystallization regions, preventing irregular grain growth and merging.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a polysilicon film with even grain size and regular grain arrangement, enhancing the performance of semiconductor, display substrates, and display devices by minimizing energy exposure in specific areas during annealing, leading to improved display quality.
Implementation Method 1
applying crystallization treatment, by optical annealing process, to the amorphous silicon film to form a polysilicon film
Implementation Method 2
applying crystallization treatment... to the amorphous silicon film to form a polysilicon film
Implementation Method 3
the optical annealing process comprises an excimer laser annealing process
Implementation Method 4
Since the focus of the laser beam in the optical annealing process cannot reach the depth of the amorphous silicon material in the first grooves, the energy applied thereon is lower than the energy applied on the amorphous silicon material at other positions. Therefore, the amorphous silicon material in the first grooves forms un-melted crystallization seeds during the annealing process.
Data Source
AI summary
A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the polysilicon layer film being laminated sequentially, and wherein regularly arranged first grooves being provided on a surface of the buffer layer contacting the polysilicon film; the polysilicon film being formed, by applying crystallization treatment, through an optical annealing process, to an amorphous silicon film on the buffer layer having regularly arranged first grooves.