Polycrystalline Silicon Production via Chlorosilane HCl Removal

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Solution Overview

Problem

Conventional methods for producing polycrystalline silicon face challenges in environmental load and production cost, particularly due to inefficient reuse of exhaust gases containing hydrogen chloride and impurities.

Innovation Solution

A method involving a silicon deposition step using a chlorosilane compound and hydrogen, followed by separation, hydrogen chloride removal with a chlorosilane solution, hydrogen refining with activated carbon, activated carbon regeneration, and gas circulation, which reduces impurity accumulation and lowers equipment costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If exhaust gas is refined and circulated to obtain polysilicon, then production cost increases due to complex refining processes, but direct use of exhaust gas deteriorates polysilicon quality

Engineering Contradiction:
Improvepolysilicon qualityVSAvoidrefining process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes hydrogen chloride from the exhaust gas stream using a dedicated removal step, separating this harmful component from the recyclable hydrogen and silane compounds. This allows the gas to be circulated back to the polysilicon production process without compromising product quality, while avoiding the need for complete re-refining of the entire exhaust gas stream.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediary substance (chlorosilane solution) to remove hydrogen chloride from the exhaust gas. This intermediary enables selective removal of the harmful component while preserving the valuable hydrogen and silane compounds for circulation back to the production process, simplifying the overall refining requirements.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If more polycrystalline silicon is produced, then production output increases, but environmental load increases due to larger amounts of exhaust gas disposed

Engineering Contradiction:
Improvepolycrystalline silicon production outputVSAvoidexhaust gas environmental load
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent recovers valuable components (hydrogen and silane compounds) from the exhaust gas that would otherwise be discarded. By removing hydrogen chloride and circulating the cleaned gas back to the production process, the system transforms waste exhaust gas into a reusable resource, reducing environmental load while supporting increased production output.

Inventive Principle:
Principle #34Discarding and recovering

Solution Approach 2:

The patent converts the harmful exhaust gas stream into a beneficial resource by selectively removing only the harmful hydrogen chloride component while preserving and reusing the valuable hydrogen and silane compounds. This transforms waste disposal into a resource recovery opportunity, allowing increased production without proportional increases in environmental burden.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Manufacturing precision

If activated carbon is used to remove hydrogen chloride, then hydrogen chloride removal is achieved, but activated carbon requires regeneration and replacement increasing operational complexity

Engineering Contradiction:
Improvehydrogen chloride removal efficiencyVSAvoidactivated carbon regeneration complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces expensive, complex activated carbon systems with a simpler, more economical chlorosilane solution for hydrogen chloride removal. This substitution eliminates the need for activated carbon regeneration infrastructure, reducing operational complexity while maintaining effective hydrogen chloride removal capability.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of polycrystalline silicon at a lighter environmental load and lower production cost by effectively removing hydrogen chloride and impurities, allowing for efficient gas circulation and reduced equipment scale.

Implementation Method 1

a hydrogen chloride removal step of obtaining a gas component B by removing hydrogen chloride by bringing the gas component A into contact with a chlorosilane solution

Methodology Applied
Scientific EffectAbsorption: Absorption (physical)

Implementation Method 2

a hydrogen refining step of obtaining hydrogen gas A by removing the chlorosilane compound by bringing the gas component B into contact with activated carbon

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 3

an activated carbon regeneration step of bringing the activated carbon, which has been brought into contact with the gas component B, into contact with hydrogen gas B so as to regenerate the activated carbon

Methodology Applied
Scientific EffectDesorption: Desorption

Data Source

PatentUS10995006B2Method for producing polycrystalline silicon
Publication Date: 2021.05.04 TOKUYAMA CORP
  • US10995006B2 patent drawing

AI summary

Provided is a method for producing polycrystalline silicon at a lighter environmental load and at low production cost. A method in accordance with the present invention for producing polycrystalline silicon includes: a silicon deposition step; a separation step; a hydrogen chloride removal step; a hydrogen refining step; an activated carbon regeneration step; and a circulation step.