Dust-Free Polysilicon Granules via Fluidized Bed Optimization

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Solution Overview

Problem

Current granulated polysilicon production results in materials with a porous structure, leading to gas inclusion, increased production costs, and poor resistance to abrasion, causing dust formation and processing issues during handling and further processing.

Innovation Solution

Producing polycrystalline granulated silicon with a density greater than 99.9% of theoretical solid density and surface roughness less than 150 nm, using a radiation-heated fluidized bed reactor with a mixture of hydrogen and halosilanes, and optimizing process conditions to minimize pore content and dust formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If granulated polysilicon is produced using conventional fluidized bed deposition, then production efficiency is improved, but the material develops a porous structure causing gas inclusion and abrasion resistance deterioration

Engineering Contradiction:
Improveproduction efficiencyVSAvoidmaterial quality (pore-free and dust-free)
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies parameter changes by controlling deposition conditions including temperature gradients, gas flow rates, and particle residence time in the fluidized bed. These parameter optimizations enable the formation of dense, pore-free silicon particles while maintaining high production efficiency through continuous processing.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces mechanical post-processing methods (such as crushing and sieving of rod polysilicon) with a direct chemical vapor deposition process that produces granulated polysilicon in the desired form factor, eliminating mechanical stress that would create dust and pores.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Object-generated harmful factors

If additional degassing steps are applied to remove gas from pores, then gas content is reduced, but production costs increase and contamination risk rises

Engineering Contradiction:
Improvegas contentVSAvoidproduction process complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by forming pore-free particles directly during the deposition process itself, preventing gas inclusion from the outset. This eliminates the need for subsequent degassing operations, maintaining process simplicity while achieving the desired low gas content.

Inventive Principle:
Principle #10Preliminary action

3Ease of operation

If granulated polysilicon with porous structure is handled and transported, then material can be moved to processing locations, but abrasion occurs forming fine silicon dust that causes contamination and blockages

Engineering Contradiction:
Improvehandling and transportationVSAvoiddust formation
Core Design Contradiction:
Ease of operationVSObject-generated harmful factors

Solution Approach 1:

The patent optimizes deposition parameters including particle temperature, gas velocity, and residence time to produce particles with dense structures and controlled surface properties. This reduces particle fragility and abrasion during handling while maintaining ease of transportation.

Inventive Principle:
Principle #35Parameter changes

4Productivity

If monosilane is used as silicon-containing starting gas, then deposition process proceeds, but homogeneous gas phase reaction causes direct dust formation that increases material loss

Engineering Contradiction:
Improvedeposition rateVSAvoidmaterial loss due to dust formation
Core Design Contradiction:
ProductivityVSLoss of substance

Solution Approach 1:

The patent applies local quality by creating conditions where deposition occurs preferentially at particle surfaces rather than through homogeneous gas phase reactions. This is achieved through controlled temperature gradients and reactant distribution, ensuring silicon deposits on particles in a controlled manner rather than forming dust throughout the reactor volume.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resulting material is highly resistant to abrasion, reducing dust formation and allowing for problem-free further processing, such as in photovoltaics and electronics, without the need for additional degassing steps, thereby increasing yields and reducing contamination and processing issues.

Implementation Method 1

the latter being heated to high temperatures by means of a heating apparatus

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Implementation Method 2

The addition of a silicon-containing reaction gas causes a pyrolysis reaction to take place at the hot particle surface. Elemental silicon is deposited on the silicon particles

Methodology Applied
Scientific EffectPyrolysis: Pyrolysis

Implementation Method 3

causes a pyrolysis reaction to take place at the hot particle surface. Elemental silicon is deposited on the silicon particles

Methodology Applied
Scientific EffectChemical vapour deposition: Chemical Vapour Deposition

Implementation Method 4

Granulated polysilicon is produced in a fluidized bed reactor. It is produced by fluidizing silicon particles by means of a gas flow in a fluidized bed

Methodology Applied
Scientific EffectFluidization: Fluidisation

Data Source

PatentUS7708828B2Dust-free and pore-free, high-purity granulated polysilicon
Publication Date: 2010.05.04 WACKER CHEMIE AG
  • US7708828B2 patent drawing
  • US7708828B2 patent drawing
  • US7708828B2 patent drawing

AI summary

A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.