Polysilicon Electric Fuse Structure Optimizing Programming Current Window
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Solution Overview
Problem
The existing electric fuse structures face challenges in optimizing the programming current window and maintaining a high post-value resistance, leading to defects and complex manufacturing processes due to non-uniform ion implantation and resistance variations.
Innovation Solution
A manufacturing method involving source-drain ion implantations of both N-type and P-type doping on polysilicon, with equivalent concentrations to neutralize the ions, forming a flat and uniform interface, and subsequent metal salicide formation using a self-aligned process to achieve a high resistance value and optimized programming current window.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electric fuse structure is used, then the programming current window is narrow, but the manufacturing process becomes complex and yield decreases
Solution Approach 1:
The patent changes the electrical parameters of the polysilicon fuse element by performing sequential ion implantations with different doping types (first N-type, then P-type). This dual doping approach modifies the resistance characteristics and programming current window of the fuse, resolving the contradiction between reliability and productivity by enabling broader programming current tolerance while maintaining manufacturing efficiency.
Solution Approach 2:
The patent applies preliminary ion implantation doping to the polysilicon layer before fuse formation and programming. By pre-modifying the electrical characteristics of the polysilicon through controlled ion implantation, the fuse element is prepared in advance to achieve optimal programming current window and manufacturing yield without requiring complex post-processing steps.
2Manufacturing precision
If ion implantation is performed to modify fuse characteristics, then resistance control improves, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple ion implantation steps (N-type followed by P-type doping) into a unified manufacturing sequence for fuse formation. By merging these doping operations into the standard fuse fabrication process flow, the patent achieves precise resistance control through cumulative doping effects while avoiding the need for separate, complex manufacturing stages.
Solution Approach 2:
The patent applies ion implantation selectively to the polysilicon fuse element region, providing localized doping that precisely controls the resistance characteristics of the fuse without affecting surrounding circuitry. This localized modification approach achieves high manufacturing precision for fuse resistance while keeping the overall manufacturing process manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively increases the post-value resistance of the electric fuse, stabilizes electrical characteristics, and optimizes the programming current window, improving the yield and reliability of the fuse structure.
Implementation Method 1
performing a source-drain ion implantation of a first doping type on the polysilicon; performing a source-drain ion implantation of a second doping type on the polysilicon
Implementation Method 2
forming a metal salicide on the surface of the doped polysilicon
Implementation Method 3
use the principle of electro-migration to cause the fuse to be fused by passing a large instantaneous current through the fuse
Data Source
AI summary
The present disclosure provides an electric fuse structure and a manufacturing method therefor, the manufacturing method including providing a substrate, forming a polysilicon corresponding to the electric fuse structure on the substrate, performing a source-drain ion implantation of a first doping type on the polysilicon, performing a source-drain ion implantation of a second doping type on the polysilicon, the first doping type being different from the second doping type, and forming a metal salicide on the surface of the doped polysilicon. The electric fuse structure manufactured according to the manufacturing method provided in the present disclosure has a high post-value resistance, so that a programming current window is effectively optimized, and the manufactured electric fuse structure has a uniform internal interface and good electrical characteristics.