Polysilocarb Precursor for High-Purity Silicon Carbide
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Solution Overview
Problem
Current methods for producing high-purity silicon carbide (SiC) are costly, inefficient, and unable to meet the demand for semiconductor-grade materials due to contamination issues and high production costs, limiting its widespread application.
Innovation Solution
A method involving a solvent-free liquid polysilocarb precursor formulation with specific molar ratios of silicon, carbon, and oxygen, cured and then pyrolyzed to produce high-purity SiC with purities of at least 99.99% and ultra-high purity SiC with purities of 99.9999%, minimizing impurities like aluminum, boron, and other metals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to produce silicon carbide, then production cost is reduced, but purity is insufficient for semiconductor applications
Solution Approach 1:
The invention changes the chemical composition parameters of the precursor material by using polysiloxane with controlled Si, C, and O ratios, and by adding specific metal contaminants at controlled levels to enable selective removal during processing, achieving high purity SiC through parameter optimization
Solution Approach 2:
The invention uses oxygen-containing precursor materials (polysiloxanes with Si-O-Si bonds) that facilitate oxidized removal of carbon and other impurities during pyrolysis and sintering processes, enabling purification without additional aggressive oxidizing agents
2Manufacturing precision
If high-purity starting materials are used, then purity of final product is improved, but production cost increases significantly
Solution Approach 1:
The invention uses inexpensive polysiloxane precursor materials that can contain controlled levels of metal contaminants, which are then removed during the processing sequence, replacing the need for expensive high-purity starting materials while achieving the same final purity level
Solution Approach 2:
The invention extracts and removes metal contaminants from the precursor material through selective chemical reactions and filtration steps during processing, transforming an impure but cheap starting material into a high-purity final product
3Manufacturing precision
If multiple reaction steps with solvents and reagents are used, then purity is improved, but process complexity and hazardous waste increase
Solution Approach 1:
The invention extracts and removes metal contaminants through selective chemical reactions and filtration steps during processing, transforming an impure but cheap starting material into a high-purity final product
Solution Approach 2:
The invention discards harmful organic solvents and reagents by using a solvent-free or water-based slurry process, eliminating the need for multiple solvent exchange steps and reducing hazardous waste while maintaining purification effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs and achieves high-purity SiC, enabling its use in semiconductor applications and other demanding fields where high-purity materials are required, overcoming the limitations of existing methods.
Implementation Method 1
pyrolyzed to produce high-purity SiC
Data Source
AI summary
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.