Polysiloxane Insulator for Alkali-Developable Thin Film Transistors

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Solution Overview

Problem

Conventional polysiloxane-based materials for electronic components and thin film transistors face challenges in maintaining heat resistance and transparency while being alkali-soluble, and existing insulators for organic TFTs have inferior insulating properties compared to inorganic materials.

Innovation Solution

A polysiloxane compound with photopolymerizable functional groups, such as epoxy or (meth)acryloyl groups, and specific structures like phenolic hydroxyl and carboxyl groups, which allows for alkali developability and forms a cured product with superior heat-resistant transparency, used in a curable composition for thin film transistors as a passivation layer or gate insulator.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If organic acid groups are introduced to polysiloxane compounds to impart alkali solubility, then alkali developability is improved, but heat resistance and light resistance decrease

Engineering Contradiction:
Improvealkali developabilityVSAvoidheat resistance and light resistance
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The invention changes the chemical structure parameter by introducing specific acidic groups (carboxyl groups at 0.1-5 mmol/g and phenolic hydroxyl groups at 0.1-5 mmol/g) into the polysiloxane compound. This precise parameter control enables alkali solubility while maintaining heat and light resistance by optimizing the balance between acidic group content and polysiloxane backbone stability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite structure by combining polysiloxane backbone with specific acidic functional groups (carboxyl and phenolic hydroxyl). This composite approach allows the material to exhibit both alkali developability from the acidic groups and high heat/light resistance from the polysiloxane framework, resolving the contradiction between solubility and stability.

Inventive Principle:
Principle #40Composite materials

2Ease of operation

If conventional resins with acidic groups are used for alkali-developable resist materials, then alkali developability is achieved, but reliability at high temperatures deteriorates due to thermal decomposition, cracking and separation

Engineering Contradiction:
Improvealkali developabilityVSAvoidthermal stability
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The acidic groups (carboxyl and phenolic hydroxyl) serve as temporary functional elements that enable alkali developability during the resist process, then are effectively 'used up' or neutralized after serving their purpose, while the main polysiloxane structure remains intact and stable at high temperatures.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The invention optimizes the concentration parameters of acidic groups within specific ranges (0.1-5 mmol/g) to achieve sufficient alkali solubility without compromising thermal stability. This parameter optimization allows the material to function as a resist at processing temperatures and maintain reliability during subsequent high-temperature electronic component mounting.

Inventive Principle:
Principle #35Parameter changes

3Temperature

If organic materials are used for gate insulators in organic TFTs to enable low-temperature formation, then manufacturing temperature is reduced, but insulating properties deteriorate compared to inorganic insulators

Engineering Contradiction:
Improveformation temperatureVSAvoidinsulating properties
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The invention creates a composite insulating material by combining the polysiloxane base structure with specific acidic functional groups. This composite structure achieves a balance between low-temperature processability (inherent polysiloxane property) and superior insulating properties (enhanced by the specific molecular structure and functional groups), outperforming conventional organic insulators.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The invention optimizes molecular parameters including polysiloxane backbone structure, crosslinking density, and acidic group content to achieve both low-temperature formation capability and high insulating performance. The specific composition ratios and molecular weight parameters enable the material to form stable insulating films at low temperatures with properties superior to conventional organic insulators.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polysiloxane compound provides a thin film with excellent electrical insulating properties and heat resistance, enabling the formation of reliable passivation layers and gate insulators for organic TFTs with improved transparency and stability.

Implementation Method 1

a polysiloxane compound having at least one photopolymerizable functional group in a molecule thereof

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Implementation Method 2

a thin film that can be formed by solution coating

Methodology Applied
Scientific EffectSolution coating: Coatings

Data Source

PatentUS9464172B2Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
Publication Date: 2016.10.11 KANEKA CORP
  • US9464172B2 patent drawing
  • US9464172B2 patent drawing
  • US9464172B2 patent drawing

AI summary

An object of the present invention is to provide a polysiloxane compound that can be developed in an aqueous alkali solution and can yield a cured product or thin film having superior heat-resistant transparency and insulating properties, a curable composition thereof, and a thin film transistor provided with a passivation layer or gate insulator using the same, and the present invention relates to a polysiloxane compound having at least one photopolymerizable functional group in a molecule thereof, and having at least one member selected from the group consisting of an isocyanuric acid backbone structure, a phenolic hydroxyl group and a carboxyl group within the same molecule, to a curable composition containing the polysiloxane compound, and to a cured product thereof.