Polysiloxane Coating for Resist Pattern Filling and Collapse Prevention
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Solution Overview
Problem
Existing lithography methods face challenges in preventing pattern collapse during the development and rinsing steps due to Laplace forces, particularly when forming fine resist patterns, and existing solutions often result in filling defects or dissolution of resist patterns.
Innovation Solution
A polysiloxane composition derived from hydrolysis condensation products of hydrolyzable silanes is applied to patterned resist films, allowing for solvent replacement from non-alcoholic hydrophilic to hydrophobic solvents, which stabilizes the coating composition for smooth filling between resist patterns without dissolving them, and is then removed via gas etching to reverse the pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a water-soluble silicone is used to fill gaps between resist patterns, then pattern collapse is prevented, but filling defects and dissolution of resist patterns occur
Solution Approach 1:
The patent changes the solvent parameter from water-based to alcohol-based, transforming the coating composition from hydrophilic to hydrophobic. This parameter change allows the composition to fill gaps between resist patterns without causing filling defects or dissolving the patterns, while still preventing pattern collapse during development and rinsing.
Solution Approach 2:
The patent uses a coating composition that replicates the beneficial effects of water-soluble silicone (pattern support) while avoiding its harmful effects (filling defects, resist dissolution). The alcohol-based composition copies the structural support function without the solubility issues that cause defects.
2Reliability
If a water-based polysiloxane composition is used, then pattern collapse is prevented, but the composition is not compatible with solvent development processes
Solution Approach 1:
The patent changes the solvent parameter from water-based to alcohol-based, making the coating composition compatible with solvent development processes. This parameter change maintains pattern stability while enabling versatility across different development methodologies including solvent-based, aqueous, and organic developing solutions.
3Manufacturing precision
If 2-propanol is used as a solvent for silicon-containing composition, then filling is improved, but resist patterns for solvent development are dissolved
Solution Approach 1:
The patent uses a composite material system consisting of polysiloxane dissolved in alcohol-based solvent. This composite provides both the filling capability needed for gap coverage and the appropriate solubility characteristics that prevent resist pattern dissolution while maintaining compatibility with various development processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents pattern collapse and enables precise filling between resist patterns without defects, allowing for successful pattern reversal by exploiting differences in gas etching rates, even for fine features.
Implementation Method 1
a hydrolysis condensation product (polysiloxane) of a hydrolyzable silane
Implementation Method 2
solvent replacement from non-alcoholic hydrophilic to hydrophobic solvents
Implementation Method 3
removed via gas etching to reverse the pattern
Data Source
AI summary
Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.


