Polysiloxane Resist Underlayer Film for Pattern Collapse Resistance
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Solution Overview
Problem
Conventional polysiloxane-based resist underlayer films suffer from pattern collapse issues during the miniaturization of semiconductor devices, especially when using organic solvents for development, which limits the formation of finer patterns with improved pattern collapse resistance.
Innovation Solution
A resist pattern-forming method and composition that includes a polysiloxane chain with a carboxyl group and an acid anhydride group, along with a nitrogen-containing compound, to enhance the interaction between the resist underlayer film and the resist pattern, improving pattern collapse resistance and oxygen ashing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polysiloxane-based resist underlayer film is used, then the multilayer resist process can be performed, but pattern collapse occurs during miniaturization especially when using organic solvent for development
Solution Approach 1:
The patent introduces a specific chemical parameter change by incorporating carboxyl groups and acid anhydride groups into the polysiloxane chain structure. These functional groups interact with the organic solvent during development to modify the film's mechanical properties, specifically improving pattern collapse resistance while maintaining manufacturing precision for fine patterns
Solution Approach 2:
The patent creates a composite material structure by combining polysiloxane chains with carboxyl groups and acid anhydride groups. This composite structure provides both the necessary film-forming properties for multilayer resist processes and enhanced interaction with organic solvent developers, resolving the pattern collapse issue
2Manufacturing precision
If organic solvent is used for development, then optical contrast is improved and finer patterns can be formed, but pattern collapse resistance deteriorates with conventional polysiloxane
Solution Approach 1:
The patent modifies the chemical composition parameters of the polysiloxane by introducing carboxyl groups and acid anhydride groups. These functional groups specifically interact with organic solvent developers, enabling the film to maintain structural integrity during development while allowing the optical contrast benefits of organic solvent development to be realized
Solution Approach 2:
The carboxyl groups and acid anhydride groups act as intermediary functional groups that mediate the interaction between the polysiloxane film and the organic solvent developer. This intermediary mechanism allows the film to benefit from the optical contrast improvement provided by organic solvent development while resisting pattern collapse through controlled chemical interaction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method and composition effectively form resist patterns with enhanced pattern collapse resistance and improved oxygen ashing resistance, even when using organic solvents, by promoting appropriate interactions between the resist underlayer film and the resist pattern, thereby addressing the limitations of conventional polysiloxane-based films.
Implementation Method 1
the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group
Implementation Method 2
promoting appropriate interactions between the resist underlayer film and the resist pattern
Implementation Method 3
A resist pattern-forming method and composition that includes a polysiloxane chain with a carboxyl group and an acid anhydride group, along with a nitrogen-containing compound, to enhance the interaction between the resist underlayer film and the resist pattern
Data Source
AI summary
A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.