Polysiloxane Resist Underlayer Film Composition
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Solution Overview
Problem
Existing compositions for forming resist underlayer films in semiconductor manufacturing face challenges with storage stability and coating defects, particularly due to the limitations of polysiloxane-based compositions in maintaining film thickness and etching selectivity during the miniaturization of patterns.
Innovation Solution
A composition combining polysiloxane with an organic solvent composition that includes alkylene glycol monoalkyl ether acetate and a high-boiling organic solvent, along with an acid diffusion control agent, to enhance storage stability and reduce coating defects, while maintaining high etching selectivity and pattern fidelity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If polysiloxane-based composition is used to achieve high etching selectivity, then etching selectivity is improved, but storage stability deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the solvent system by introducing alkylene glycol monoalkyl ether acetate with specific boiling point characteristics (50-90 mass%) combined with high-boiling organic solvents (10-50 mass%). This parameter change resolves the contradiction by providing a solvent system that maintains polysiloxane solubility and etching selectivity while improving storage stability through controlled evaporation rates and reduced coating defects.
Solution Approach 2:
The patent creates a composite solvent system combining alkylene glycol monoalkyl ether acetate with high-boiling organic solvents (such as γ-butyrolactone, N-methyl-2-pyrrolidone, or dimethyl sulfoxide). This composite approach allows the system to simultaneously achieve high etching selectivity from polysiloxane while the combined solvent system provides improved storage stability and reduced coating defects compared to using a single solvent type.
2Reliability
If polysiloxane-based composition is used to achieve high etching selectivity, then etching selectivity is improved, but coating defects increase
Solution Approach 1:
The patent modifies the solvent composition parameters by selecting alkylene glycol monoalkyl ether acetate with specific boiling points (50-90°C) and combining it with high-boiling organic solvents. This parameter optimization reduces coating defects by controlling solvent evaporation rates during coating, preventing premature drying and film formation issues while maintaining the high etching selectivity of polysiloxane.
Solution Approach 2:
The alkylene glycol monoalkyl ether acetate acts as an intermediary solvent that mediates between the polysiloxane polymer and the coating process. It provides appropriate solubility and controlled evaporation characteristics, reducing coating defects such as pinholes, uneven film thickness, and other harmful effects while preserving the etching selectivity of the polysiloxane component.
3Ease of manufacture
If conventional solvent composition is used to simplify the formulation, then ease of manufacture is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent optimizes the solvent composition parameters by specifying precise content ranges: alkylene glycol monoalkyl ether acetate (50-90 mass%) and high-boiling organic solvents (10-50 mass%). This parameter control achieves manufacturing precision in film thickness by regulating solvent evaporation characteristics, while the formulation remains relatively simple with only 2-3 solvent components, balancing ease of manufacture with precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed composition improves storage stability, reduces coating defects, and ensures the formation of high-quality resist patterns with improved etching selectivity, suitable for advanced semiconductor manufacturing processes.
Implementation Method 1
an organic solvent composition comprising an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C. and an organic solvent having a standard boiling point of no less than 150.0° C.
Implementation Method 2
a composition for forming a resist underlayer film includes a polysiloxane and an organic solvent composition
Data Source
AI summary
A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.