Polysiloxane Reverse Pattern Composition for Etching Resistance
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Solution Overview
Problem
Existing reverse pattern formation compositions using organic solvents face challenges in achieving high flatness, filling properties, and etching resistance, particularly in microfabrication processes where high integration and fine patterning are required, and they often result in poor Line Width Roughness (LWR) and Line Edge Roughness (LER) after etching.
Innovation Solution
A reverse pattern formation composition comprising a polysiloxane compound with specific nitrogen-containing substituents and a solvent system predominantly based on water, which enhances film flatness, filling properties, and etching resistance, and improves LWR and LER by forming a polysiloxane compound with repeating units represented by general formulae (I) or (II) and using water as the primary solvent.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic solvents are used in reverse pattern formation composition, then the composition can be coated on resist pattern, but the resist pattern is dissolved depending on its type
Solution Approach 1:
The patent changes the solvent parameter from organic solvents to aqueous solvents (water-based), fundamentally altering the chemical composition to eliminate dissolution of resist patterns while maintaining coating capability. This parameter change resolves the contradiction by selecting a solvent that is chemically compatible with the resist material.
Solution Approach 2:
The patent introduces a specific polysiloxane compound as an intermediary substance that enables effective coating using aqueous solvents. The polysiloxane acts as a mediator between the water-based solvent and the resist pattern, ensuring proper adhesion and film formation without causing dissolution, thus resolving the contradiction between coating capability and resist integrity.
2Ease of manufacture
If conventional reverse pattern formation composition is used, then processing can be performed, but flatness and filling properties are poor
Solution Approach 1:
The patent employs a composite material system consisting of polysiloxane compounds with specific nitrogen-containing substituents combined with aqueous solvents. This composite formulation achieves both processing capability and superior flatness and filling properties, resolving the contradiction by creating a material system that simultaneously provides ease of manufacture and high manufacturing precision.
Solution Approach 2:
The patent changes the chemical structure parameters of the polysiloxane compound by incorporating specific nitrogen-containing substituents (such as amino groups), which fundamentally alters the coating properties to achieve excellent flatness and filling characteristics while maintaining processing capability.
3Ease of manufacture
If reverse pattern is used for etching ground substrate, then etching processing can be performed, but etching resistance is insufficient and LWR and LER are poor
Solution Approach 1:
The patent uses a composite material system of polysiloxane compounds with nitrogen-containing substituents and aqueous solvents that provides both etching processing capability and superior etching resistance. The composite structure ensures high etching resistance while maintaining smooth pattern profiles, resolving the contradiction between ease of manufacture and manufacturing precision in etching applications.
Solution Approach 2:
The patent changes the chemical composition parameters by incorporating nitrogen-containing functional groups in the polysiloxane structure, which enhances etching resistance and improves line width and edge roughness characteristics, thereby resolving the contradiction between etching processing capability and etching quality.
Data Source
AI summary
[Problem] To provide a composition, which is a reverse pattern formation composition comprising an aqueous solvent having little influence on a resist pattern, and which is excellent in flatness and filling properties after coating and has excellent etching resistance. Furthermore, a method for forming a pattern using the same is provided. [Means for Solution] A reverse pattern formation composition comprising a polysiloxane compound comprising a repeating unit having a nitrogen-containing group and a solvent comprising water, and a method for forming a fine pattern using the same.