Hydrogenated Polysiloxazane Filler for Semiconductor Capacitor Gap
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Solution Overview
Problem
As semiconductor technology advances, there is a challenge in forming highly-integrated and smaller semiconductor capacitors with sufficient storage capacity, particularly in filling narrow gaps without contraction or voids during heat treatment, which affects the capacitor's performance and reliability.
Innovation Solution
A filler composed of hydrogenated polysiloxazane with specific chemical moieties and oxygen content, combined with a thermal acid generator and surfactant, is used to fill gaps in semiconductor capacitors, providing excellent filling properties and preventing contraction during heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the capacitor size is reduced to increase integration, then the horizontal area is decreased, but the storage capacity becomes insufficient
Solution Approach 1:
The patent transitions from horizontal area expansion to vertical area expansion by forming a groove structure and filling it with conductive material. This dimensional change allows the capacitor to achieve sufficient storage capacity through increased height rather than width, enabling continued miniaturization while maintaining capacitance values.
Solution Approach 2:
The patent embeds a groove structure within the capacitor architecture, nesting the conductive filling material inside the groove formed in the dielectric layer. This nested configuration maximizes the use of vertical space within the capacitor structure, allowing sufficient storage capacity in a compact footprint.
2Manufacturing precision
If a filler is used to fill the groove, then the groove is filled, but contraction occurs during heat treatment creating voids
Solution Approach 1:
The patent modifies the chemical composition parameters of the filler material by adding specific additives that inhibit contraction during heat treatment. By changing the material parameters (composition, viscosity, thermal properties), the filler maintains its integrity and completely fills the groove without forming voids, achieving both manufacturing precision and reliability.
3Area of moving object
If the groove width is reduced to increase integration, then the horizontal space is optimized, but filling becomes difficult without voids
Solution Approach 1:
The patent adjusts the physical and chemical parameters of the filler material, including viscosity, surface tension, and wetting properties, to enable effective filling of narrow grooves. These parameter changes allow the filler to flow into and completely fill grooves with reduced width, maintaining high filling quality and eliminating voids even in highly integrated structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The filler effectively fills minute gaps with no air voids or tiny gaps, ensuring excellent flatness and preventing cracks, thereby enhancing the performance and reliability of semiconductor capacitors.
Implementation Method 1
a thermal acid generator that is capable of generating an acid when heated
Implementation Method 2
The hydrogenated polysiloxazane may have an oxygen content of about 0.2 to about 3 wt %
Data Source
AI summary
A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3:The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.