Polysulfone Amide Photoresist for Low-Temperature Water-Based Development

The patent changes the chemical structure parameters by introducing polysulfone amide compounds with specific repeating units containing sulfur atoms and aromatic residues. This structural modification enables the material to achieve heat resistance without requiring high-temperature cyclization, allowing pattern formation at lower temperatures that prevent wafer thermal distortion.

The patent creates a composite resin composition by combining polysulfone amide compound with other components including crosslinking agents and solvents. This composite approach achieves both heat resistance and alkali solubility, resolving the contradiction between thermal stability and development compatibility.

The patent modifies the chemical parameters by incorporating amide groups and specific aromatic residues into the polysulfone backbone. This creates a structure that maintains thermal stability while introducing alkali solubility through the amide functional groups, enabling water-based development.

The patent uses a water-based developer as an intermediary medium that can effectively remove unexposed portions of the resist. The polysulfone amide compound is specifically designed to be soluble in this aqueous alkali solution, facilitating easy and environmentally friendly development without requiring organic solvents.

The patent adopts a water-based developer system that is environmentally benign and economically viable. The aqueous alkali solution can be easily disposed of or treated, eliminating the need for expensive and environmentally hazardous organic solvent recovery systems.

The patent converts the potential harm of lacking alkali solubility into a benefit by deliberately designing the polysulfone amide structure to include alkali-soluble functional groups. This enables the use of water-based developers, transforming an environmental burden into an environmental advantage.