Polyurea Air-Gap Formation in Semiconductor Recesses
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Solution Overview
Problem
The existing techniques for forming air gaps in semiconductor devices face challenges in achieving desired shapes and sizes, particularly in recesses with arbitrary shapes, which affects parasitic capacitance and mechanical strength, and result in inefficient material consumption due to non-selective film formation across varying wiring intervals.
Innovation Solution
A method involving a multi-chamber vacuum processing system that adjusts the substrate temperature between 200°C and 280°C, laminates a polyurea film using isocyanate and amine gases, and thermally decomposes the film to form air gaps under a sealing film, allowing for selective film formation in recesses with narrow widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If a film is formed using existing techniques, then film formation occurs across the entire substrate, but this results in non-selective film formation and inefficient material consumption
Solution Approach 1:
The patent applies local quality by making the film formation process selective to specific regions (narrow-width recesses) rather than uniform across the entire substrate. The polyurea film is formed only in recesses with width less than a predetermined value, achieving spatially differentiated film deposition that improves material efficiency while maintaining manufacturing feasibility through temperature-controlled selective polymerization
2Reliability
If air gaps are formed in recesses with arbitrary shapes, then parasitic capacitance is optimized, but the shape and size control of air gaps becomes difficult
Solution Approach 1:
The patent applies parameter changes by controlling the substrate temperature (200-280°C) to regulate the polymerization reaction of isocyanate and amine gases. This temperature control enables precise formation of polyurea films with specific thicknesses and shapes that match the recess geometry, allowing accurate air gap formation in recesses with arbitrary shapes while maintaining manufacturing precision
Solution Approach 2:
The patent uses a polyurea film as an intermediary material to define the air gap shape and size. The film is formed in the recesses and then removed to create air gaps, allowing indirect control of air gap geometry through the intermediate film formation process, which improves both shape control and parasitic capacitance optimization
3Ease of manufacture
If the substrate temperature is not controlled within 200-280°C, then the film formation process is simpler, but selective film formation in narrow-width recesses cannot be achieved
Solution Approach 1:
The patent applies parameter changes by setting the substrate temperature within the specific range of 200-280°C to enable selective polymerization of isocyanate and amine gases only in narrow-width recesses. This temperature parameter control creates the necessary conditions for selective film formation while maintaining process feasibility through standard semiconductor manufacturing equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of air gaps with predetermined shapes and sizes, optimizing parasitic capacitance and mechanical strength while reducing material waste by selectively forming films in narrow-width recesses.
Implementation Method 1
adjusting a temperature of a substrate having a recess formed therein and accommodated in a container to a temperature within a range of 200 degrees C. or higher and 280 degrees or lower
Implementation Method 2
laminating a polyurea film in the recess in the substrate by supplying isocyanate gas and amine gas into the container
Implementation Method 3
thermally decomposes the film to form air gaps under a sealing film
Data Source
AI summary
A method of manufacturing a semiconductor includes adjusting a temperature of a substrate having a recess formed therein and accommodated in a container to a temperature within a range of 200 degrees C. or higher and 280 degrees or lower, and laminating a polyurea film in the recess in the substrate by supplying isocyanate gas and amine gas into the container.