Polyurea-Polyimide Film Substitution for Semiconductor Wafer Warpage
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Solution Overview
Problem
The warping of semiconductor wafers due to film characteristics hinders fine processing and micronization of wiring in semiconductor device manufacturing, as existing techniques fail to effectively form precise patterns on substrates.
Innovation Solution
A method involving the formation of a polyurea film on a substrate, followed by etching and subsequent substitution with a polyimide film using a reaction gas, allowing for precise pattern formation and ion implantation without significant thermal shrinkage and warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a film is formed on the substrate for mask processing, then the film can function as a mask for processing lower layer films, but the substrate warps due to film characteristics, making fine processing difficult
Solution Approach 1:
The patent divides the mask film into two separate functional layers: a polyurea film for pattern formation and a polyimide film for mask processing. This segmentation allows each layer to perform its specific function independently, preventing the polyimide film's thermal shrinkage from affecting the pattern precision formed by the polyurea film.
Solution Approach 2:
The patent uses a composite structure of polyurea and polyimide films stacked together. The polyurea film provides excellent pattern formation properties, while the polyimide film provides heat resistance and mask functionality. This composite material approach combines the advantages of both materials while mitigating their individual disadvantages.
2Ease of manufacture
If the substrate is heated for film formation or processing, then film deposition or material transformation can occur, but thermal shrinkage and warpage increase, degrading pattern alignment
Solution Approach 1:
The patent separates the thermal processing function from the pattern formation function by using different materials for each purpose. The polyimide film undergoes thermal shrinkage for mask processing, while the polyurea film maintains dimensional stability for pattern formation, thus resolving the contradiction between heat treatment capability and pattern alignment precision.
3Device complexity
If a single film is used for both pattern formation and mask processing, then the process is simpler, but the film cannot maintain both pattern precision and heat resistance simultaneously
Solution Approach 1:
The patent divides the single film function into two separate films: polyurea for pattern formation and polyimide for mask processing. This segmentation enables each film to be optimized for its specific function, with polyurea providing excellent pattern precision and polyimide providing heat resistance, thereby achieving both pattern precision and thermal stability.
Solution Approach 2:
The patent employs a composite film structure where polyurea and polyimide are stacked together. This composite approach allows the system to exhibit both the pattern-forming capabilities of polyurea and the heat-resistant properties of polyimide, overcoming the limitations of using a single material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-precision pattern formation and micronization of semiconductor device wiring by suppressing warpage and maintaining precise alignment of patterns on both polyurea and polyimide films, enhancing the manufacturing process.
Implementation Method 1
forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate
Implementation Method 2
heating the substrate to depolymerize the polymer
Implementation Method 3
supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer
Data Source
AI summary
A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.