Polyurea Sacrificial Film for Semiconductor Planarization
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Solution Overview
Problem
Current sacrificial films used in semiconductor manufacturing, such as PMMA and heat-resistant resins, face challenges in adjusting shape and film thickness, leading to inefficiencies and material deterioration during the manufacturing process, particularly on substrates with stepped portions, which can result in optical errors and increased process complexity.
Innovation Solution
A method involving the formation of a polyurea film on a substrate using a precursor polymerization process, where the film is heated to adjust its sectional shape and thickness, allowing for planarization and removal, thereby simplifying the manufacturing process and avoiding the need for additional etching steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the film thickness of an organic film is increased to eliminate the influence of substrate shape, then optical errors are reduced, but the formation time increases and throughput decreases
Solution Approach 1:
The patent changes the material parameter from conventional organic films (PMMA, resist) to a polymer with reversible equilibrium between polymerization and depolymerization. This allows the film to be formed thinner while still achieving the desired planarization effect, as the reversible depolymerization enables effective shape adjustment without requiring excessive film thickness
Solution Approach 2:
The patent uses a composite approach by combining a polymer with reversible equilibrium characteristics with precursor materials. This composite material system enables both sufficient film thickness for planarization and controlled depolymerization for shape adjustment, resolving the contradiction between optical error reduction and throughput maintenance
2Shape
If heating is applied to melt resin for shape adjustment, then the resin shape can be adjusted and heat resistance obtained, but the resin is deteriorated by heating
Solution Approach 1:
The patent utilizes a reversible phase transition mechanism where the polymer undergoes depolymerization at elevated temperatures rather than simple melting. This reversible depolymerization allows shape adjustment through controlled molecular weight reduction, after which the polymer can re-polymerize, avoiding permanent deterioration that would occur with conventional thermal melting of resins
Solution Approach 2:
The patent introduces dynamic reversibility to the polymer system, allowing the material to adapt its molecular structure in response to temperature changes. The equilibrium between polymerization and depolymerization enables the polymer to dynamically adjust its properties during heating, facilitating shape control without irreversible damage
3Manufacturing precision
If etching by plasma is used to adjust film amount of sacrificial film, then film thickness can be controlled, but the number of processes increases
Solution Approach 1:
The patent extracts the film thickness control function from the etching process and integrates it into the polymer deposition and depolymerization process. By controlling the depolymerization conditions, the desired film amount is achieved directly during the polymer processing step, eliminating the need for separate plasma etching operations
Solution Approach 2:
The patent makes the polymer with reversible equilibrium a multi-functional material that simultaneously serves as the sacrificial film, the planarization layer, and the thickness control mechanism. The reversible depolymerization process performs both shape adjustment and film amount control in a single integrated process, replacing multiple separate steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables easy adjustment of the sacrificial film's shape and thickness, reducing optical errors and process complexity, while maintaining high chemical resistance and improving throughput by using a polymer with reversible equilibrium reactions between polymerization and depolymerization.
Implementation Method 1
heating the sacrificial film; a polymer having reversible equilibrium between polymerization and depolymerization
Implementation Method 2
forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate
Data Source
AI summary
There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.