Modified Polyurethane Polishing Layer for Acidic Slurry Uniformity

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Solution Overview

Problem

Current polyurethane-based polishing pads for semiconductor wafers face challenges in achieving high polishing rates and uniformity, especially with acidic slurries, due to limitations in zeta potential control and surface affinity with abrasive grains.

Innovation Solution

A novel Schiff base-containing chain extender is used to produce a polyurethane with functional groups like carboxylic acid, hydroxyl, and amino groups, which can be modified to achieve a zeta potential of -1.0 mV or less at pH 3.0, enhancing affinity with abrasive grains in both acidic and alkaline slurries through surface treatments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional polyurethane materials are used for polishing pads, then the structure is simple and manufacturing is easy, but the polishing rate and uniformity are insufficient especially with acidic slurries

Engineering Contradiction:
Improvepolishing rateVSAvoidpolyurethane structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent uses composite materials by combining polyurethane with specific functional additives including carboxylic acid groups, hydroxyl groups, and amino groups. This composite approach enables the polishing pad to achieve high polishing rates with acidic slurries while maintaining structural integrity and performance uniformity.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies parameter changes by controlling the zeta potential of the polyurethane surface to be -1.0 mV or less at pH 3.0. This specific parameter optimization enhances the affinity with abrasive grains in acidic slurries, directly improving the polishing rate and uniformity without excessive structural complexity.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the zeta potential is not optimized, then the polyurethane structure remains simple, but the affinity with abrasive grains in acidic slurry is poor

Engineering Contradiction:
Improveaffinity with abrasive grainsVSAvoidsurface property control
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent optimizes the zeta potential parameter to -1.0 mV or less at pH 3.0 through controlled incorporation of functional groups. This parameter control ensures reliable affinity with abrasive grains in acidic slurries while maintaining a manageable level of surface property complexity.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality by introducing specific functional groups (carboxylic acid, hydroxyl, amino) at the surface level of the polyurethane. This localized functionalization enhances affinity with abrasive grains without requiring complex bulk structure modifications.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If functional groups are added to improve polishing performance, then polishing rate and uniformity improve, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvepolishing uniformityVSAvoidpolyurethane production process
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent achieves high polishing uniformity by controlling the zeta potential parameter and functional group incorporation during the polyurethane synthesis process. This approach integrates performance optimization into the existing manufacturing workflow rather than requiring separate complex post-processing steps.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The modified polyurethane polishing pads exhibit improved polishing characteristics, including higher polishing rates and uniformity, by optimizing surface properties and zeta potential, even with acidic slurries, thereby addressing the limitations of existing technologies.

Implementation Method 1

a zeta potential of -1.0 mV or less at pH 3.0, enhancing affinity with abrasive grains

Methodology Applied
Scientific EffectZeta potential: Electrostatics

Data Source

PatentUS11787894B2Polyurethane for polishing layer, polishing layer including polyurethane and modification method of the polishing layer, polishing pad, and polishing method
Publication Date: 2023.10.17 KURARAY CO LTD
  • US11787894B2 patent drawing
  • US11787894B2 patent drawing
  • US11787894B2 patent drawing

AI summary

A Schiff base-containing chain extender may be a diol having a Schiff base or a derivative thereof, as well as a polyurethane produced using the same and a modification method thereof, and a polishing layer including a polyurethane and a polishing method using the polishing layer.