PoP Package Structure With Through-Insulator Vias for Heat Dissipation
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high-density integration and efficient heat dissipation in package structures due to the miniaturization of electronic components, which requires advanced three-dimensional integration technologies.
Innovation Solution
A method for fabricating a package-on-package (PoP) structure involving a first redistribution layer with connecting portions and conductive layers, embedded through insulator vias, and encapsulating semiconductor dies, followed by a second package stacked on the first, utilizing conductive balls and terminals for electrical connections, enhancing heat dissipation and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional integration technology is used to achieve high-density integration, then integration density is improved, but device complexity increases
Solution Approach 1:
The patent implements package-on-package stacking where a second package is vertically stacked on a first package, creating a nested three-dimensional structure. This nesting approach achieves high-density integration by utilizing vertical space rather than horizontal expansion, thereby increasing integration density while managing device complexity through modular packaging architecture.
Solution Approach 2:
The patent transitions from two-dimensional planar integration to three-dimensional vertical integration by stacking multiple packages in the vertical dimension. This dimensionality change enables higher integration density by exploiting the Z-axis space, allowing multiple functional layers to be integrated without proportionally increasing lateral device complexity.
2Area of stationary object
If package size is reduced to accommodate miniaturized components, then area utilization is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent addresses heat dissipation in miniaturized packages by introducing vertical thermal pathways through the stacked package structure. Heat can dissipate through multiple layers and interfaces in the vertical dimension, providing additional thermal escape routes that compensate for the reduced horizontal area, thereby maintaining heat dissipation capability despite package miniaturization.
3Adaptability or versatility
If additional processing steps are added to achieve versatile package designs, then design flexibility is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary action by pre-forming redistribution layers, conductive structures, and packaging configurations on separate packages before stacking. This allows each package to be independently optimized and prepared using standardized processes, then combined through the stacking operation. The preliminary preparation enables design flexibility while avoiding the need for complex additional processing steps after stacking.
Solution Approach 2:
The patent creates versatile package designs through a universal stacking architecture that can accommodate different package types, sizes, and functionalities. The standardized interface and stacking methodology allow the same basic process framework to be applied across various package configurations, providing design flexibility without proportionally increasing manufacturing complexity through process specialization.
Data Source
AI summary
A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.