Porous CMP Wafer Cleaning Brush for Nanoparticle Removal

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Solution Overview

Problem

Conventional post-CMP cleaning processes for semiconductor wafers suffer from particle defect issues due to slurry abrasives, polish wastes, and byproducts, particularly affecting advanced technology nodes with feature sizes down to 10-100 nm.

Innovation Solution

Development of brushes with PVA-copolymer or other polymers, including cellulose, lignin, nylon, or polytetrafluoroethylene backbones, and designed nanometer-scale pores, along with functional groups to enhance brush-particle affinity, improving the removal of particles up to 100 nm in size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional sponge brushes are used for post-CMP cleaning, then the cleaning process is simple and cost-effective, but particle defects increase due to inability to remove nanometer-scale particles

Engineering Contradiction:
Improveparticle removal efficiencyVSAvoidbrush structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The brush is formed from a porous polymeric material with controlled pore sizes (50-1000 nm) that enable the brush to effectively capture and remove nanometer-scale particles from the wafer surface during post-CMP cleaning, directly addressing the particle removal efficiency requirement

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The brush utilizes a composite structure combining a polymeric backbone material (cellulose, lignin, nylon, or PTFE) with functional groups and porous structures, creating a material that integrates mechanical cleaning capability with enhanced particle affinity and removal efficiency

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If brush pore size is reduced to remove smaller particles, then particle removal efficiency improves, but brush manufacturing complexity increases

Engineering Contradiction:
Improveparticle size removal capabilityVSAvoidbrush fabrication difficulty
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent specifies controlling the pore size parameter within a defined range (50-1000 nm) and controlling the degree of polymerization (500-20,000) to achieve the desired particle removal capability while maintaining manufacturability through established polymer processing techniques

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances post-CMP cleaning performance by reducing the amount of tiny particles remaining on wafers, thereby improving yield and productivity.

Implementation Method 1

the outer surface is formed by a porous polymeric material having pores... enhancing brush-particle affinity

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

brushes are used to remove the residue on the polished wafers... relative movement of the polishing pad and the wafer surface

Methodology Applied
Scientific EffectPhysical contact cleaning: Friction

Data Source

PatentUS20250361345A1Brush for cleaning wafers after chemical mechanical polishing (CMP) process
Publication Date: 2025.11.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250361345A1 patent drawing
  • US20250361345A1 patent drawing
  • US20250361345A1 patent drawing

AI summary

Tools and brushes for cleaning wafers after a Chemical Mechanical Polishing (CMP) process and methods for fabricating such brushes are provided. A brush for cleaning wafers after a Chemical Mechanical Polishing (CMP) process includes a sleeve member; and a plurality of spaced-apart nodules disposed to protrude from the sleeve member, and wherein an outer surface of the nodules is formed by a porous polymeric material having pores, and wherein the pores have a maximum pore dimension of 1000 nanometers (nm).