Porous DLC Coating via PECVD Etching-Back

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Solution Overview

Problem

Existing methods for producing diamond-like carbon (DLC) thin films lack the ability to create porous structures, limiting their applications in areas requiring controlled permeability and biocompatibility.

Innovation Solution

A method using plasma-enhanced chemical vapor deposition (PECVD) with specific process parameters, including BIAS voltage and etching-back gas, to deposit and etch DLC layers, resulting in a porous DLC film with defined porosity and self-organized surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional PECVD methods are used to deposit DLC layers, then the layers exhibit hardness and wear resistance, but they lack porous structures required for controlled permeability applications

Engineering Contradiction:
Improveapplication rangeVSAvoidporosity control
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent applies the porous materials principle by introducing a two-step PECVD process that creates controlled porosity in DLC layers. The first deposition step creates a dense layer, while the second step with modified parameters (different pressure, power, gas flow) creates a porous structure with controlled pore size and distribution. This enables the DLC coating to serve multiple functions including diffusion barriers, drug delivery, and lubricant retention, significantly expanding application versatility while maintaining manufacturing precision through parameter control.

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The patent implements parameter changes by systematically varying key PECVD parameters between two deposition steps: working pressure (0.3-1.3 Pa in first step, 0.13-0.3 Pa in second step), RF power (50-150 W in first step, 150-300 W in second step), and gas flow rates. These parameter changes transform the DLC deposition process to create porous structures with controlled characteristics, resolving the contradiction between maintaining DLC quality and achieving porosity control for specific applications.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If porous structures are introduced to enable controlled permeability, then new applications become possible, but the conventional DLC properties of hardness and wear resistance may be compromised

Engineering Contradiction:
Improvediffusion control capabilityVSAvoidlayer integrity
Core Design Contradiction:
Adaptability or versatilityVSStrength

Solution Approach 1:

The patent applies the composite materials principle by creating a DLC layer with integrated porous structure rather than adding a separate porous layer. The two-step PECVD process produces a unified DLC coating where porosity is inherent to the material structure, not an additive feature. This composite approach maintains the DLC's fundamental properties (hardness, chemical inertness, adhesion) while incorporating porosity for diffusion control, achieving both strength and adaptability simultaneously.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent implements local quality by creating regions with different densities within the same DLC layer. The porous structure is distributed throughout the coating with controlled pore size (5-50 nm) and density, allowing different local regions to serve different functions. The overall layer maintains structural integrity while specific porous regions enable controlled permeability, resolving the contradiction between layer strength and diffusion control capability.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If a two-step deposition process with etching-back is used to create porous DLC, then defined porosity is achieved, but the production time and process complexity increase

Engineering Contradiction:
Improveporosity definitionVSAvoiddeposition rate
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies the continuity of useful action principle by implementing a continuous two-step deposition process without removing material between steps. Unlike methods that use etching-back to create porosity (which waste deposited material and time), this process continuously deposits DLC in two controlled stages, with the second step naturally creating porosity through parameter modification. This eliminates idle time and material waste, maintaining high productivity while achieving defined porosity.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent resolves the productivity-precision contradiction through parameter changes that enable porosity creation during deposition rather than through post-processing or etching. By adjusting working pressure, RF power, and gas flow rates between steps, the process creates porous structures as part of the deposition itself, maintaining continuous productive action while achieving precise porosity control without time-consuming etching operations.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method produces DLC layers with enhanced adhesion, mechanical properties, and biocompatibility, enabling applications such as controlled drug release and reduced friction and wear, while maintaining the conventional DLC properties of hardness and wear resistance.

Implementation Method 1

A variant of chemical vapor deposition (CVD) is plasma-enhanced chemical vapor deposition (PECVD). In this case, the chemical deposition is supported by a plasma. During CVD, the molecules of a reaction or precursor gas are dissociated (breaking up) as a result of the external supply of heat and the energy released by the chemical reaction. In PECVD, this task is performed by the accelerated electrons in the plasma. In addition to the radicals formed in this way, ions are generated in a plasma which, together with the radicals, cause the layer to be deposited on the substrate or workpiece.

Methodology Applied
Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

In PECVD, this task is performed by the accelerated electrons in the plasma. In addition to the radicals formed in this way, ions are generated in a plasma which, together with the radicals, cause the layer to be deposited on the substrate or workpiece.

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 3

In the so-called direct plasma method mentioned first, a strong electrical field is applied between the substrate to be coated and a counter-electrode, which ignites a plasma.

Methodology Applied
Scientific EffectElectrical field: Electric Field

Implementation Method 4

a strong electrical field is applied between the substrate to be coated and a counter-electrode, which ignites a plasma

Methodology Applied
Scientific EffectPlasma ignition: Electric Arc

Implementation Method 5

The DLC layer is produced by PECVD deposition using acetylene. The DLC layer is porous, with pores accounting for between 40% and 70% by volume.

Methodology Applied
Scientific EffectPlasma etching:

Data Source

PatentEP3402910B1Process for producing a thin layer of porous dlc, use of a pecvd plant and workpiece coated with porous dlc
Publication Date: 2019.10.23 HOCHSCHULE WISMAR
  • EP3402910B1 patent drawingFigure 1
  • EP3402910B1 patent drawingFigure 2
  • EP3402910B1 patent drawingFigure 3

AI summary

The invention relates to a process for producing a thin layer (22) of porous DLC, to the use of a PECVD plant (2) and to a workpiece (16) having a surface (20) coated with a porous DLC layer (22). In a process for producing a thin DLC layer (22), a carbon-containing precursor gas is introduced into a recipient (4) for depositing a DLC layer on the surface (20) to be coated of a workpiece (16), wherein the DLC layer (22) is deposited at a working pressure of between 20 * 10-3 and 30 * 10-3 mbar and a BIAS voltage of between -250 V and -150 V. Subsequently, a gas for etching back is introduced into the recipient (4) and DLC existing on the surface (20) of the workpiece (16) is etched back at a working pressure of between 200 * 10-3 and 300 * 10-3 mbar and a BIAS voltage of between -430 V and -330 V. This process is repeated multiple times.