Porous Insulating Layers for Semiconductor Parasitic Capacitance Reduction
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly due to issues with parasitic capacitance and void formation during fabrication.
Innovation Solution
A semiconductor device design featuring porous insulating layers with framework layers and covering layers, where the porous insulating layers are formed by transforming an energy-removable layer using heat or light, reducing parasitic capacitance and enabling void-free top contact fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional insulating layers are used in scaled-down semiconductor devices, then manufacturing process remains simple, but parasitic capacitance increases and fabrication yield decreases
Solution Approach 1:
The patent employs porous insulating layers with controlled porosity (30-95%) to reduce parasitic capacitance between conductive elements. The porous structure decreases the dielectric constant of the insulating material, thereby reducing capacitive coupling while maintaining electrical insulation properties. This resolves the contradiction by improving reliability through reduced parasitic effects without requiring fundamentally new manufacturing approaches.
Solution Approach 2:
The patent uses composite structures combining framework layers (providing mechanical support) with porous insulating materials (reducing parasitic capacitance). This composite approach allows the insulating layer to simultaneously provide structural integrity and electrical isolation with reduced capacitance, improving fabrication yield in scaled-down devices while managing structural complexity through functional integration.
2Manufacturing precision
If top contact is formed without covering layers, then fabrication process is simpler, but voids form during manufacturing
Solution Approach 1:
The patent applies covering layers to the framework structure before forming the top contact. This preliminary action protects the framework surfaces and prevents void formation during subsequent manufacturing steps. The covering layers are deposited in advance to ensure complete coverage and eliminate potential voids, thereby improving manufacturing precision without requiring complex real-time process control.
Solution Approach 2:
The covering layers serve as a protective cushion during the top contact formation process. By placing these layers beforehand, the patent prevents defects (voids) from forming during manufacturing operations. This prior cushioning approach ensures defect-free contact formation while adding only moderate structural complexity through the covering layer deposition steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces parasitic capacitance and improves fabrication yield by utilizing porous insulating layers with framework and covering layers, enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
performing an energy treatment to transform the energy-removable layer into porous insulating layers
Implementation Method 2
transforming an energy-removable layer into porous insulating layers using heat or light
Data Source
AI summary
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate; forming an insulating layer above the substrate; forming a first opening in the insulating layer; conformally forming a first framework layer in the first opening; forming an energy-removable layer on the first framework layer and filling the first opening; forming a second opening along the energy-removable layer and the first framework layer; conformally forming a second framework layer in the second opening; forming a top contact on the second framework layer and filling the second opening and forming a top conductive layer on the top contact; and performing an energy treatment to transform the energy-removable layer into porous insulating layers on two sides of the top contact.