Porous Insulating Substrate for High Voltage Microstructures

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Solution Overview

Problem

Existing microstructures with fine conductive paths struggle to maintain insulation properties under high voltage conditions, as moisture within the insulating substrate can form conduction paths, compromising the electrical integrity of anisotropic conductive members used in electronic components.

Innovation Solution

A microstructure with an insulating substrate containing through holes filled with conductive material, where the average opening diameter of the holes is 5 nm to 500 nm, and the average shortest distance between holes is 10 nm to 300 nm, with a moisture content of 0.005% or less, enhancing the withstand voltage while maintaining fine conductive paths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If fine conductive paths are formed with small diameter and narrow pitch, then productivity and miniaturization are improved, but insulation properties deteriorate under high voltage conditions

Engineering Contradiction:
ImproveminiaturizationVSAvoidinsulation properties
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The insulating substrate is designed with a porous structure containing micropores having a diameter of 0.01 μm to 1 μm. These pores are filled with insulating resin material to form an insulating member that maintains both fine conductive path spacing and high insulation properties. The porous structure increases the effective insulation distance without increasing the physical footprint, enabling miniaturization while preserving insulation performance.

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The invention uses a composite structure combining an insulating substrate with porous characteristics and insulating resin material. This composite approach creates an insulating member that achieves both high insulation resistance and mechanical stability, allowing fine conductive paths to be arranged with narrow pitch while maintaining reliability under high voltage conditions.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If conductive paths are arranged with narrow pitch, then device complexity is reduced, but insulation resistance decreases due to moisture-induced conduction paths

Engineering Contradiction:
Improvewiring complexityVSAvoidinsulation resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The insulating substrate incorporates micropores (0.01 μm to 1 μm in diameter) that are filled with insulating resin material. This porous structure increases the effective insulation distance between closely spaced conductive paths, preventing moisture-induced conduction even when paths are arranged with narrow pitch, thus simplifying wiring while maintaining insulation resistance.

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The invention changes the physical and chemical parameters of the insulating substrate by introducing a porous structure with specific pore diameter (0.01 μm to 1 μm) and filling it with insulating resin material. This parameter modification enhances the insulation properties, allowing narrower pitch between conductive paths without compromising insulation resistance.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If insulating substrate thickness is reduced to enable miniaturization, then productivity is improved, but withstand voltage capability deteriorates

Engineering Contradiction:
ImproveminiaturizationVSAvoidwithstand voltage
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The insulating substrate employs a porous structure with micropores (0.01 μm to 1 μm in diameter) filled with insulating resin material. This structure increases the effective insulation distance within a reduced physical thickness, enabling miniaturization while maintaining high withstand voltage capability. The porous architecture provides additional insulation pathways without increasing the substrate thickness.

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The invention introduces a dimensional aspect by creating a porous structure within the insulating substrate. The micropores extend through the substrate thickness, creating three-dimensional insulation pathways that increase the effective insulation distance without proportionally increasing the physical thickness, thus enabling miniaturization while preserving withstand voltage capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively improves the insulation resistance and withstand voltage of the insulating substrate, ensuring reliable electrical connectivity even at high voltages by minimizing moisture-induced conduction paths, thus securing the performance of electronic components.

Implementation Method 1

the density of the conductive paths is 2,000,000 pieces/mm2 or more, and the insulating substrate is a structure consisting of an anodized film of an aluminum substrate having micropores (through holes)

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Data Source

PatentUS9799594B2Microstructure, multilayer wiring board, semiconductor package and microstructure manufacturing method
Publication Date: 2017.10.24 FUJIFILM CORP
  • US9799594B2 patent drawing
  • US9799594B2 patent drawing
  • US9799594B2 patent drawing

AI summary

The present invention is to provide a microstructure capable of improving the withstand voltage of an insulating substrate while securing fine conductive paths, a multilayer wiring board, a semiconductor package, and a microstructure manufacturing method. The microstructure of the present invention has an insulating substrate having a plurality of through holes, and conductive paths consisting of a conductive material containing metal filling the plurality of through holes, in which an average opening diameter of the plurality of through holes is 5 nm to 500 nm, an average value of the shortest distances connecting the through holes adjacent to each other is 10 nm to 300 nm, and a moisture content is 0.005% or less with respect to the total mass of the microstructure.